A second Chalcogenide Chemical Vapor Deposition (MOCVD 2) instrument with the capabilities for in situ optical characterization is expected to be installed during the summer of 2018. In-situ optical characterization will enable on-the-fly modifications to the growth process for the desired layer composition. It would also provide a powerful tool to probe the growth mechanism of the layered chalcogenides. The additional analysis chamber with Raman and PL aids in characterizing these sensitive materials in a controlled ambient.
- 8 bubbler stations and 4 gas sources including H2Se and H2S
- In situ spectroscopic ellipsometery
- Separate analysis chamber for Raman and Photoluminescence analysis
- Wide range of growth temperatures (200 - 1000 °C) and reactor pressures (50 - 700 Torr)
- Equipped to grow, undoped and doped, WS2, WSe2, MoS2, MoSe2, NbS2, NbSe2, as well as, alloys and heterostructures of these materials