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2018 Webinars

2D Chalcogenide Epitaxy by Gas Source Chemical Vapor Deposition

Tuesday, April 24, 2018

Speaker: Tanushree H. Choudhury
Description: Gas source CVD provides a means for obtaining large area, uniform transition metal dichalcogenide monolayer and few-layer films. In addition to choice of substrate, manipulating the growth conditions is crucial in achieving epitaxy. In this talk, I will highlight our efforts at growth of epitaxial WSe2, MoS2 and WS2 using a cold-wall gas source CVD system.

Frontiers in MBE Growth of TMDs and Topological Insulators

Tuesday, March 27, 2018

Speaker: Anthony Richardella
Description: Molecular beam epitaxy (MBE) is well known for its atomic level control of high quality crystal growth. We discuss the challenges and progress of using MBE for 2D chalcogenides focusing on the thermodynamics and defects in these materials and highlighting our recent work with magnetically doped topological insulators.

Modeling 2D Growth Outcomes

Tuesday, January 30, 2018

Speaker: Yuanxi Wang
Description: Synthesis of 2D chalcogenides usually involves complex reaction kinetics and multiple growth parameters leading to many outcomes in terms of morphology, grain size, doping level, and layer thickness. In this talk I will describe cases where growth outcomes can be modeled and predicted by theory and modeling, with focus on grain control.