Epitaxial Graphene Furnace (SICG)

Description of the furnace:

The epitaxial graphene furnace is a customized graphite hot-zone furnace with the capability to be heated up to 2500 ℃. The work zone in the chamber is 4∅×6h (inch), enabling to grow samples with different sizes from 5 mm square to 4 inch wafer in different customized crucibles. The chamber exhaust includes a rotary vane pump and diffusion pump, allowing the ultimate vacuum in the chamber to reach 10-6 Torr at room temperature.  With the home-built gaslines and pressure controlling system, argon as carrier gas and H2 & CH4 as precursors are introduced into the system. The operation pressure in the chamber ranges form 1 to 1000 Torr.

  • Maximum temperature: 2500 atmosphere dependent.
  • Gas supply: Ar (up to 1000 sccm), H2 (up to 200 sccm), CH4 (up to 100 sccm).
  • Operating pressure: 1 to 1000 Torr (temperature dependent).
  • Ultimate vacuum: 10-6 Torr or better at room temperature.
  • Epitaxial graphene on SiC substrates with different sizes ranging from 5 mm square to 4 inch wafer.