What Has Been Achieved:
There is significant interest in the development of single photon sources for applications in quantum technologies. Localized quantum emission from defects in 2D materials such as WSe2 is a promising approach. The objective of this study was to demonstrate the role of strain in creating localized quantum emitters using wafer-scale WSe2 films rather than exfoliated flakes as employed in previous studies. The quantum emitters were fabricated by draping WSe2 films, removed from the growth substrate, over ultra-sharp sub-10 nanometer tips, forming an array of localized quantum emitters. Detailed characterization of the strain and emission properties of the emitters was carried out.
Importance of Achievement:
Our results demonstrate formation of arrays of localized quantum emitters based on wafer-scale epitaxial WSe2 films.
Unique Features of the MIP That Enabled Project:
MOCVD growth of high quality wafer-scale WSe2 films.
W. Wu, C. K. Dass, J. R. Hendrickson, R. D. Montaño, R. E. Fischer, X. Zhang, T. H. Choudhury, J. M. Redwing, Y. Wang, and M. T. Pettes*, "Locally defined quantum emission from epitaxial few-layer tungsten diselenide," Appl. Phys. Lett. 2019, 114(21), 213102.
Credits/Names: Michael Pettes, Los Alamos National Laboratory
Download PDF Version: MIP-2DCC-1539916_QuantumEmittersWSe2_User2019_FinalPDF.pdf
Year of Research Highlight: 2019
Select a Highlight Type: User Highlight