Speaker: Hans Boschker, Woflgang Braun and Dong Yeong Kim
Staff scientists, Max Planck Institute for Solid State Research Stuttgart, Germany
Abstract: We propose and demonstrate a novel thin film epitaxy technique combining the advantages of molecular beam epitaxy (adsorption-limited growth modes, ultrapure elemental sources) and pulsed laser deposition (no limitations in source and substrate temperatures as well as background gas composition, extremely simple in-vacuum setup). In such a thermal laser epitaxy system, multiple elemental sources that can be exchanged by the same mechanism as the substrates are heated thermally and continuously by individual laser beams. Substrate heating is performed by a CO₂ laser, allowing temperatures exceeding 2000 °C.
We demonstrate the UHV deposition of practically all elements in the periodic table, including W, Ta, C, Nb and Mo, as well as the deposition of oxide films from elemental metal sources in 10% ozone, 90% oxygen background pressures as high as 10⁻² hPa.
The advantages and promises of this clean, simple, fast and versatile new technique are presented and discussed in detail.