Two-dimensional oxides open door for high-speed electronics

Student works on 2D material in lab

By Matthew Carroll

UNIVERSITY PARK, Pa. – Advances in computing power over the decades have come thanks in part to our ability to make smaller and smaller transistors, a building block of electronic devices, but we are nearing the limit of the silicon materials typically used. A new technique for creating 2D oxide materials may pave the way for future high-speed electronics, according to an international team of scientists.

New method can scale, simplify manufacture of stretchy semiconductors

Image of a stretchy transistor illuminated from above

By Mariah R. Lucas

UNIVERSITY PARK, Pa. — Soft, elastic semiconductors and circuits could advance wearable medical devices and other emerging technologies, but the high-performance electronics are difficult and expensive to manufacture. A Penn State-led research team plans to make the process easier and cheaper with a new manufacturing method.

They published their approach Nov. 28 in Nature Electronics.

Joan Redwing

Joan Redwing

Distinguished Professor of Materials Science and Engineering and of Electrical Engineering
Director and Principal Investigator, LATTICE Programmable Cloud Lab
Associate Director, 2D Crystal Consortium Materials Innovation Platform

(e) jmr31@psu.edu, (e) redwing@matse.psu.edu
(o) 814-865-8665
N-336 Millennium Science Complex

https://sites.psu.edu/redwing/
Suzanne Mohney

Suzanne Mohney

Professor of Materials Science and Engineering, and Electrical Engineering

(e) sem2@psu.edu, (e) mohney@ems.psu.edu
(o) 814-863-0744
N-209 Millennium Science Complex

Osama Awadelkarim

Osama Awadelkarim

Affiliate Researcher Professor
UNESCO Chair Professor and Director of the Center for Nanotechnology Education and Utilization

(e) ooa1@psu.edu, (e) ooaesm@engr.psu.edu
(o) 814-863-1773
212 Earth and Engineering Sciences Building

656 White Course Dr

https://iee.psu.edu/people/osama-awadelkarim