List of Bulk Samples Available

Bi2Se3

Bi2Se3 is a well-known topological insulator. This system has rhombohedral layered crystal structure with quintuple layers (QLs) ordered in a Se-Bi-Se-Bi-Se sequence along the c-axis. The QLs weakly interact through the van der Waals forces and therefore the materials cleave easily between QLs. The typical n-type charge carrier density and Hall mobility are about 1018 cm-3 and 700 cm2/Vs at room temperature.

Bi1.98Ca0.02Se3

Bi2Se3 is a topological insulator with n-type carrier charge due to selenium self-vacancies. p-type Bi2Se3 single crystal is synthesized by substituting calcium on bismuth site to compensate the electrons created by the selenium vacancies. The typical charge carrier density and Hall mobility are about 1018 cm-3 and 2000 cm2/Vs at 2K, respectively. The Fermi level of the system located in the bulk bandgap, suggested from the Scanning Tunneling Spectroscopy (STS) spectra, makes the system suitable for the topological surface states study. See example certification sheet for more information.

Fe-doped Bi2Se3

Time-reversal symmetry (TRS) can be broken when a magnetic order is introduced into topological insulators and resulting the non-trivial topological surface drives into a new massive Dirac fermion state. By intercalating iron into Bi2Se3 quintuple layers, the magnetic ground state of the system is antifferomagentic with TN = 100 K. However, this system is also a metamagentic system, where the magnetic properties of the system can be driven into ferromagnetic by external magnetic field, Hc ~ 400 Oe. The typical n-type charge carrier density and Hall mobility are about 1019 cm-3 and 1700 cm2/Vs at 2 K.

SnSe2 

SnSe2 is a transition metal dichalcogenide. The system can be exfoliated into thin 2D layers due to the weakly-bounded layered structure. The typical n-type charge carrier density and Hall mobility are about 1017 cm-3 and 2/Vs at room temperature.

1T’ WTe2

WTe2 is a well-known transition metal dichalcogenide. Recently, it is predicted to be a Type-II Weyl semimetal. Grown using chemical vapor transport using bromine as a transport agent, this distorted 1T structure of WTe2 has a typical n-type charge carrier density and Hall mobility of about 1020 cm-3 and 40 cm2/Vs at room temperature. See example certification sheet for more information.

MoS2

MoS2 is a well-known transition metal dichalcogenide and recent experimental measurements have demonstrated gate-induced superconductivity in exfoliated MoS2 multilayers. Grown using chemical vapor transport with iodine as the transport agent, our crystals have a typical room temperature charge carrier density of about 1015.

Nb-doped MoS2

MoS2 is a well-known transition metal dichalcogenide and recent experimental measurements have demonstrated gate-induced superconductivity in exfoliated MoS2 multilayers. p-type MoS2 can be synthesized by niobium doping using chemical vapor transport with iodine as the transport agent. The typical p-type charge carrier density and Hall mobility of our Nb-doped MoS2 sample are about 1018 to 1019 cm-3 and 15 cm2/Vs at room temperature.

ZrS2

Chemical vapor transport using iodine as the transport agent was used to produce ZrS2 crystals. The formation of ZrS2 is confirmed by hexagonal crystal features and Raman spectrum that matches literature reports for the material.

ZrSe2

ZrSe2 flakes have been synthesized using iodine as the transport agent during chemical vapor transport growth.The formation of ZrSe2 is confirmed by hexagonal crystal features and Raman spectrum that matches literature reports for the material.

ZrSxSe2-x

Flakes of ZrSxSe2-x have been produced via chemical vapor transport using an iodine transport agent and loaded source weight ratios of Zr, Se and S powder of 1:0.5:1.5 respectively. The flake is layered and a freshly cleaved surface was used for EDS composition analysis. It was found through normalized atomic % content the crystal contains an S:Se ratio of 1.52:0.48 which is very close to the source loading stoichiometry.  See example certification sheet for more information.

Bi2Te3

Bi2Te3 is one of the good thermoelectric materials and has been commercialized for a wide range of applications in power generation and refrigeration. By alloying the Bi2Te3 and Sb2Te3, it allows us to fine-tune the carrier density as well as the reduction in lattice thermal conductivity.

 

InSe

InSe is a mono-chalcogenides layered compound. It receives great interest due to the exceptional properties, such as high electron mobility, tunable absorption, and extremely strong photoresponse. XRD pattern suggests the crystal is in β-phase.

 

α-In2Se3

α-In2Se3 is a layered transition metal chalcogenide featuring a van de Waals interlayer coupling and an energy gap of 1.4 eV. This material was predicted to be a ferroelectric material in bulk.

SnSe

SnSe is a semiconductor with a bulk indirect bandgap of 0.9eV. Due to its low thermal conductivity as well as electrical conductivity, it is one of the most efficient thermoelectric materials.

 

VSe2

VSe2 has a metallic behavior in the resistivity measurement with a charge density wave below 110K. This material receives great interest due to the observation of ferromagnetic ordered in monolayer at room temperature.

 

WSe2

WSe2 is a semiconductor with a bulk indirect bandgap of ~1.2eV.

 

2H-MoSe2

MoSe2 is a semiconductor with a bulk indirect bandgap of 1.1 eV.

AgVP2Se6 i

AgVP2Se6 is a quaternary layered ferromagnetic semiconductor (Tc ~ 18.5K) with chiral structure. The Se-Se are bonded via weak van der Waals, allowing layers to be easily exfoliated. This metal thiophosphate material has been predicted to host the quantum anomalous Hall effect and allow for spontaneous valley splitting and valley pseudospin field effect transistor in its 2D limit.

MnBi2Te4

MnBi2Te4 has recently been established as the first intrinsic antiferromagnetic (AFM) topological insulator (TI) with TN = 25K. Several exotic properties, such as quantum anomalous Hall effect (QAHE), axion insulator, and Chern insulator with high-Chern-number have been experimentally observed in its 2D limit.

Mn(Bi1-xSbx)2Te4

The as-grown MnBi2Te4 is heavily electron-doped possible due to non-stoichiometry or antisite defects.  By partially substituting Sb for Bi, its Fermi level not only can be tuned from the bulk conduction band (electron-doped) to the bulk valence band (hole-doped) but also its carrier mobility is dramatically enhanced. It makes the system suitable to realize the proposed topological state, such as idea Weyl semimetal. We capable of growing Mn(Bi1-xSbx)2Te4 from x = 0 to x = 1.0

MnBi4Te7

MnBi4Te7 is an antiferromagnetic topological insulator (TN = 13K), with the building block of septuple layer MnBi2Te4 and a quintuple layer of Bi2Te3. Due to the weak interlayer magnetic coupling as compared to MnBi2Te4, an antiferromagnetic with a small saturation field is achieved.

 

Sm2Te5

Sm2Te5 is a rare-earth polytelluride that has two separate charge density wave distortions of its square nets of tellurium. Due to the weak van der Waals bonding, the layers can be easily exfoliated.

CeTe3

CeTe3 is one of the quasi-two-dimensional compounds with two square Te-sheets that are stacked along the b-axis. Due to its quasi 2D nature of the Te-sheet, the charge density wave is formed at room temperature.

CrTe2

CrTe2 is a metastable layered magnetic compound with Tc at 310K. Due to the weak van der Waals bonding, the layers can be easily exfoliated. It thus offer new opportunities to study spintronic devices at room temperature.

 

FeSe0.45Te0.55

FeSe0.45Te0.55 is an iron based superconductors with Tc~14K

2H-TaS2

2H-TaS2 shows an incommensurate charge density waves (CDW) transition among ~80K and become superconductor at Tc~1K.

 

 

 

2H-TaSe2

2H-TaSe2 is a metal, which shows the incommensurate Charge density waves (CDW) transition at 120K. It also become a superconductor below 0.1K.

ReSe2

ReSe2 is a semiconductor with band gap ~1.1eV

1T-MoTe1.8S0.2

1T-MoTe1.8S0.2 is a superconductors with Tc~1.3K

TiSe2

TiSe2 is a semimetal with CDW around 202 K.

TbTe3

TbTe3 is a metal and shows CDW transition at 335K. It also exhibits a long range incommensurate magnetic order emerges at 5.78K

NdTe3

NdTe3 is an isostructural compound to the TbTe3. It shows an AFM magnetic transition at 3K.

 

 

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