User Highlights 2024

Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators
Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators
2024 User Research Highlights
Project Summary: The presence of a Weyl semimetal state in the spin-aligned phase of intrinsic…
read more
Distinguishing surface and bulk electromagnetism via their dynamics in an intrinsic magnetic topological insulator
Distinguishing surface and bulk electromagnetism via their dynamics in an intrinsic magnetic topological insulator
2024 User Research Highlights
Project Summary: The indirect exchange interaction between local magnetic moments via surface electrons…
read more
Project Summary: 2D semiconductors are promising candidates for quantum information processes and offer the possibility of achieving in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D dots and systematically controlling their size is challenging. Here, we report the observation of lateral confinement of excitons in in-plane MoSe2quantum dots (~15-60 nm w
Confinement of Excited State in Two-Dimensional In-Plane Quantum Heterostructures
2024 User Research Highlights
Project Summary: 2D semiconductors are promising candidates for quantum information processes and offer…
read more
Assessment of wafer scale MoS2 atomic layers grown by MOCVD using organo-metal, organo-sulfide and H2S precursors
Assessment of wafer scale MoS2 atomic layers grown by MOCVD using organo-metal, organo-sulfide and H2S precursors
2024 User Research Highlights
Project Summary: MOCVD is of growing interest for the synthesis of wafer-scale TMD monolayer and few-…
read more
Three-dimensional integration of two-dimensional field-effect transistors
Three-dimensional integration of two-dimensional field-effect transistors
2024 User Research Highlights
With the escalating costs of developing and manufacturing integrated circuit (IC) chips, methods to…
read more
Wafer-scale transition metal dichalcogenides enable large area 2D electronics and optoelectronics
Wafer-scale transition metal dichalcogenides enable large area 2D electronics and optoelectronics
2024 User Research Highlights
Ultra-thin 2D semiconductors based on monolayer transition metal dichalcogenides (TMDs) are seen as…
read more

In-House Highlights 2024

Illuminating mechanisms of epitaxy of 2D van der Waals crystals via synthesis, characterization and theory/simulation
Illuminating mechanisms of epitaxy of 2D van der Waals crystals via synthesis, characterization and theory/simulation
2024 In-House Research Highlights

Van der Waals epitaxy, a unique growth mechanism that relies on weak intermolecular forces between…

read more
Evidence of magnetic fluctuation induced Weyl semimetal state in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4
Evidence of magnetic fluctuation induced Weyl semimetal state in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4
2024 In-House Research Highlights

The recent study of intrinsic antiferromagnetic topological insulator Mn(Bi,Sb)2Te4…

read more
Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
Towards a mechanistic understanding of the formation of 2D-GaNx via MOCVD
2024 In-House Research Highlights

Epitaxial graphene (EG) plays a crucial role in the confinement and stabilization of 2D group III…

read more
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
2024 In-House Research Highlights

Epitaxial growth of 2D transition metal dichalcogenides (TMDs) on sapphire has emerged as a promising…

read more
Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers
2024 In-House Research Highlights

Transition metal dichalcogenide (TMD)/graphene vertical heterostructures are attractive for…

read more
Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
Growth of Nanometer-Thick –InSe by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
2024 In-House Research Highlights

2D InSe is known as a moderate bandgap semiconductor with direct to indirect bandgap crossover…

read more

Broad Impact Highlights 2024