Subscribe

Free subscriptions to newsletters, print publications, and more

2019 Webinars

https://youtu.be/CX-_2fRC10Q

Revealing fundamental parameters of 2D semiconductors via optical spectroscopy in (really) high magnetic fields

Date:
Friday, October 18, 2019

Speaker: Dr. Scott Crooker
Description: In semiconductor physics, many fundamental material properties relevant for optoelectronics (electron masses, dielectric parameters, etc) can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For the new family of monolayer transition-metal dichalcogenide (TMD) semiconductors such as MoS2 and WSe2, this magnetic field scale is substantial -- of order 100 tesla! - due to heavy carrier masses and huge exciton binding energies. Fortunately, modern pulsed magnets can achieve this scale. Using exfoliated monolayers affixed to single-mode optical fibers, we performed low-temperature magneto-absorption spectroscopy up to ~90T of all members of the monolayer TMD family. By following the diamagnetic shifts and valley Zeeman splittings of the exciton's 1s ground state and its excited 2s, 3s, ... ns Rydberg states, we determined exciton masses, radii, binding energies, dielectric properties, and free-particle bandgaps. These data provide essential ingredients for the rational design of optoelectronic van der Waals structures.
Presentation Slides: Revealing Fundamental Parameters of 2D Semiconductors via Optical Sectroscopy in (really) High Magnetic Fields (PDF)

https://youtu.be/hrhj43czbw4

Seeing is Believing: New sSNOM Tool for Nanoscale Optical Characterization

Date:
Tuesday, September 17, 2019

Speaker: Dr. Slava Rotkin
Description: The ability to investigate properties of materials by non-destructive optical tools is fundamentally limited by diffraction (Abbe’s limit). Since nanomaterials, by definition, may have properties modulated at the scale of a few nanometers, the ultimate methods of characterization are required, with good enough spatial resolution, sensitive to optical/electronic properties. Until recently, those have been limited to electron microscopy based.
This talk will present scattering-type scanning near-field optical microscopy (sSNOM) as a technique to reveal optical properties of regular (and twisted) 2DMs. A range of methods will be covered that allow to reach beyond simple imaging: for example, in twisted graphene, phonon-plasmon polariton coupling will be discussed in detail.
Presentation Slides:Seeing is Believing: New sSNOM Tool for Nanoscale Optical Characterization (PDF)

https://youtu.be/arSdlaP3b_U

Intercultural Competence: From Theory to Practice

Date:
Tuesday, April 16, 2019

Speaker: Dr. Shakoor Ward
Description: The session facilitates the development of awareness, knowledge, and skills in relating and interacting with peers belonging to other social or cultural groups. Broadly, the session is designed to foster the cultural agility and intercultural competence of participants so that “shared spaces” are welcomed as opportunities for growth and self-development.
Presentation Slides: Intercultural Competence: From Theory to Practice (PDF)

https://youtu.be/fVWuFpPdjR4

Quantum Anomalous Hall Effect in Magnetic Topological Insulator Thin Films

Date:
Tuesday, March 26, 2019

Speaker: Dr. Cui-Zu Chang
Description: The quantum anomalous Hall (QAH) effect can be considered as the quantum Hall (QH) effect without an external magnetic field, which can be realized by time-reversal symmetry breaking in a topologically non-trivial system [1, 2]. A QAH system carries spin-polarized dissipationless chiral edge transport channels without the need for external energy input, hence may have a huge impact on future electronic and spintronic device applications for ultralow-power consumption. The many decades quest for the experimental realization of QAH phenomenon became a possibility in 2006 with the discovery of topological insulators (TIs). In 2013, the QAH effect was observed in thin films of Cr-doped TI for the first time [3]. Two years later in a near-ideal system, V-doped TI, contrary to the negative prediction from first principle calculations [2], a high-precision QAH quantization with more robust magnetization and a perfectly dissipationless chiral current flow was demonstrated [4]. In this talk, I will introduce the route to the experimental observation of the QAH effect in aforementioned two systems [3, 4], and talk about our recent progress on QAH sandwich heterostructures from the axion insulator physics and the topological Hall effect [5,6].

[1] F. D. M. Haldane, Phys. Rev. Lett. 61, 2015 (1988).
[2] R. Yu et al, Science 329, 61 (2010).
[3] Cui-Zu Chang et al, Science 340, 167(2013).
[4] Cui-Zu Chang et al, Nat. Mater. 14, 473(2015).
[5] Di Xiao et al, Phys. Rev. Lett. 120, 056801 (2018).
[6] Jue Jiang et al, (2019, submitted).
 

Presentation Slides: Quantum Anomalous Hall Effect in Magnetic Topological Insulator Thin Films (PDF)

https://youtu.be/kHvgQhnINPo

Intrinsic Antiferromagnetic Topological Insulator MnBi2Te4 - Towards Realization of High-Temperature Quantum Anomalous Hall Insulator

Date:
Tuesday, February 26, 2019

Speaker: Dr. Seng Huat (Sam) Lee
Description: Quantum anomalous Hall (QAH) insulators hold great promise for applications in energy efficient electronics and quantum computation, since it supports spin-polarized dissipation-less chiral edge states. To date, the fully developed QAH state has only been realized in magnetically doped topological insulator (TI) [i.e. Cr/V doped (Bi,Sb)2Te3] films at a ‘critical temperature’ below ~ 1K, which severely constrains both the exploration of fundamental physics and meaningful technological applications based on this exotic phenomenon. Theory has shown that an intrinsic magnetic topological insulator MnBi2Te4 is an ideal platform to realize high-temperature QAH insulator and this prediction has attracted a great deal of interest. In this talk, I will discuss our studies on the spin scattering and non-collinear spin structure induced the intrinsic anomalous Hall effect probed in magnetotransport measurements.
Presentation Slides: Intrinsic Antiferromagnetic Topological Insulator MnBi2Te4 - Towards Realization of High-Temperature Quantum Anomalous Hall Insulator (PDF)

Extreme Straintronics of Graphene

Date:
Tuesday, January 29, 2019

Speaker: Mr. Riju Banerjea
Description: Whereas traditional materials break under strain measuring a few percents, 2D materials like graphene can sustain extreme strain over 20%. Using a scanning tunneling microscope we have investigated atomic-scale mechanical and electrical properties of suspended graphene under extreme (>10%) strain conditions. We find periodic ripples and electronic structures consistent with alternating nanodomains of intense (~200 T) pseudomagnetic and electric fields.
Presentation Slides: Extreme Straintronics of Graphene (PDF)

Share