Occurring monthly during the academic year, the 2DCC Webinars present new technical scientific news from within the 2DCC facility and the broader scientific community, as well as, broader topics such as science related to diversity. The webinars are free with an online registration.
The slides with voice-over for past 2DCC Webinars (2016- ) are available by following the links in the menu.
Upcoming 2DCC Webinars:
Please join us for the Fall 2024 Webinar series.
September 26: RSVP Symposium
Keynote Speaker: Jonathan Chin, Georgia Tech
Title: Impact of substrate and Se concentration on the morphology of MBE-grown SnSe thin films
Abstract: Tin selenide (SnSe) becomes piezoelectric when scaled down near the monolayer limit. The piezoelectric coefficients of SnSe are predicted to exceed those of AlN, but direct measurements have been hindered by the limited ability to achieve oriented SnSe grains of sufficient lateral dimensions to deposit electrodes. To establish control over the thin film orientation and layer count, we employ direct growth of SnSe via molecular beam epitaxy (MBE) at the 2DCC. In this RSVP project, we look at the processing conditions that influence the orientation and morphology of SnSe grains, including substrate selection, Se:Sn flux ratio, and the deposition sequence of Sn and Se. SnSe maintains a (200) orientation when grown on substrates with which it has a lattice mismatch below 5%. Substrates with higher surface energies also show an increase in lateral grain size and film coverage. Additionally, increasing the Se concentration increases the resulting SnSe grain area and promotes layer control. Understanding the influence of processing conditions like substrate selection and flux ratio will help to control the dimensions and morphologies of SnSe thin films deposited by MBE.
October 24: Thomas Folland, University of Iowa
November 21: Andrew Greenberg, Wisconsin
December 12: Tetyana Ignatova, University of North Carolina - Greensboro
On University Park campus?
Attend in person in the Millennium Science Complex N-201
