Research and Development Engineer
N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802
Atomic Layer Deposition (ALD)
Atomic Layer Deposition (ALD) is recognized as a key technology for the semiconductor industry. This deposition technique enables further device miniaturization. The technique provides uniform and conformal coatings on both planer and complex surfaces. Today a wide variety of materials can be obtained using ALD techniques.
The ALD process is based on the sequential self-limiting surface reactions, where the thin film deposition process is controlled by surface chemistry at the atomic level. The process normally requires two chemically selective half reactions utilizing two vapor phase chemical species. Often an organometallic precursor such as Tetramethyl-aluminum (TMA) and water vapor are used. The diagrams below depict the Al2O3 ALD process.