Equipment & Training Schedule

Equipment List

Technical Contacts

Drawl, William

Research and Development Engineer

wrd1@psu.edu
814-863-8558

N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
wrd1

Jones, Beth

Research and Development Engineer

baj2@psu.edu
1-814-863-1694

N104 Millennium Science Complex University Park, PA 16802

PSU UserID: 
baj2

Liu, Bangzhi

Research Associate

bul2@psu.edu
814-863-0964

N154 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
bul2

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Deposition and Growth

Deposition and Growth

Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) is recognized as a key technology for the semiconductor industry. This deposition technique enables further device miniaturization. The technique provides uniform and conformal coatings on both planer and complex surfaces. Today a wide variety of materials can be obtained using ALD techniques.

The ALD process is based on the sequential self-limiting surface reactions, where the thin film deposition process is controlled by surface chemistry at the atomic level. The process normally requires two chemically selective half reactions utilizing two vapor phase chemical species. Often an organometallic precursor such as Tetramethyl-aluminum (TMA) and water vapor are used. The diagrams below depict the Al2O3 ALD process.

AI2O3 Process

  • A – OH terminated surface
  • B - first pulse introducing the precursor AL(Ch3)3
  • C - Al replaces the H and forms AL-O bonds at the surface and Ch4 in the gas phase
  • D - the excess precursor and CH4 is removed by a pump cycle
  • E - second precursor is introduced (H20)
  • F - the H20 reacts to form Al-OH bonds and Al-O-Al bonds, CH4 and remaining H2O are removed
  • G - the result after one complete cycle

Applications

  • Deposition of high k oxides Al2O3, ZrO2, HfO2 to replace SiO2 in some gate oxide applications where thickness control is critical
  • DRAM capacitor dielectrics where highly conformal coating are required Al2O3, ZrO2, HfO2 ,…. (Ba,Sr )TiO3
  • Barrier layers TiN and TaN
  • Interconnects, seed layers, electrodes, Cu,Ni,Pt,W

Equipment/Systems