Equipment & Training Schedule

Equipment List

Technical Contacts

Drawl, William

Research and Development Engineer

wrd1@psu.edu
814-863-8558

N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
wrd1

Jones, Beth

Research and Development Engineer

baj2@psu.edu
1-814-863-1694

N104 Millennium Science Complex University Park, PA 16802

PSU UserID: 
baj2

Liu, Bangzhi

Research Associate

bul2@psu.edu
814-863-0964

N154 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
bul2

Fitzgerald, Andrew

Engineering Support Specialist

amf24
814-867-2657

N153 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
amf24

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Deposition and Growth

Deposition and Growth

Atomic Layer Deposition (ALD) Introduction

Atomic Layer Deposition (ALD) is recognized as a key technology for the semiconductor industry. This deposition technique enables further device miniaturization. The technique provides uniform and conformal coatings on both planer and complex surfaces. Today a wide variety of materials can be obtained using ALD techniques.

The ALD process is based on the sequential self-limiting surface reactions, where the thin film deposition process is controlled by surface chemistry at the atomic level. The process normally requires two chemically selective half reactions utilizing two vapor phase chemical species. Often an organometallic precursor such as Tetramethyl-aluminum (TMA) and water vapor are used. The diagrams below depict the Al2O3 ALD process.

Introduction to the ALD AI2O3 process

  • A – OH terminated surface
  • B - first pulse introducing the precursor AL(CH3)3
  • C - Al replaces the H and forms AL-O bonds at the surface and CH4 in the gas phase
  • D - the excess precursor and CH4 is removed by a pump cycle
  • E - second precursor is introduced (H2O)
  • F - the H2O reacts to form Al-OH bonds and Al-O-Al bonds, CH4 and remaining H2O are removed
  • G - the result after one complete cycle

Applications

  • Deposition of high k oxides Al2O3, ZrO2, HfO2 to replace SiO2 in some gate oxide applications where thickness control is critical
  • DRAM capacitor dielectrics where highly conformal coating are required Al2O3, ZrO2, HfO2 ,…. (Ba,Sr )TiO3
  • Barrier layers TiN and TaN
  • Interconnects, seed layers, electrodes, Cu,Ni,Pt,W

ALD Equipment:

Cambridge Savannah 200 Atomic Layer Deposition

Description: 

The Cambridge Savannah 200 Atomic Layer Deposition (ALD) deposits films one atomic layer at a time.  This system has more flexability in approved materials than our other ALD systems.

Materials Deposited:

  • Alumina (Al2O3)
  • Hafnium Oxide (HfO2)
  • Tantalum Pentoxide or Tantalum(V) Oxide (Ta2O5)
  • Titanium Dioxide (TiO2)
  • Zinc Oxide
  • Zirconium Oxide (ZrO2)
  • Oxide (NiO)
  • Tin Oxide (SnO2)
  • Lanthanum
  • Additional materials will be considered on a case by case basis

Additional Equipment Details:

  • Substrate sizes of small parts through 200mm (8 inches) diameter
  • Configured to handle up to 6 heated precursor lines (5 in use)
  • Temperature control ±0.2 °C
  • High speed ALD valves (15 msec, 200 °C)
  • Ultra high aspect ratio deposition (>1:1000)
  • Substrate temperature ranges from room temperature to 450 °C
  • Deposition uniformity < ±1%
  • Inert carrier gas operation with MFC
  • Fully Labview™-USB-PC controlled

RIMS Name:

ALD System 200

Training:

Visit the Equipment Training Information Page to get details on how to get trained on this equipment 

 


Kurt J. Lesker ALD150LX

Materials Deposited:

  • Hafnium Oxide (HfO2)
  • Aluminum Oxide (Al2O3)
  • Aluminum Nitride (AlN)
  • Zirconium Oxide (ZrO2)
  • Titanium Nitride
  • Ruthenium

Additional Equipment Details:

  • 6" substrate sizes
  • Remote plasma source for surface pretreatment and/or as a reactive component to the respective precursor
  • Gases available: N₂, H₂, O₂, H₂/Ar
  • Load locked system substrate heating to 450°
  • Currently evaluating surface modifiation capabilities

RIMS Name:

ALD System 150LX

Training:

Visit the Equipment Training Information Page to get details on how to get trained on this equipment 


Kurt J. Lesker ALD150LE

Materials Deposited:

  • Hafnium Oxide (HfO2)
  • Aluminum Oxide (Al2O3)
  • Titanium Oxide (TiO2)

Additional Equipment Details:

  • 6" substrate sizes
  • Perpendicular flow
  • Design flexible solid, liquid, and gas phase precursor deliver system
  • Independent substrate heating as well as heating of all input, chamber, and foreline components
  • Substrate heating to 500°C
  • Input, chamber and foreline heating to 200°C

RIMS Name: 

ALD System 150LE

Training:

Visit the Equipment Training Information Page to get details on how to get trained on this equipment 


Kurt J. Lesker ALD150LX Cluster Tool

The ALD150LX Cluster Tool is an integrated system that incorporates a plasma ALD system with a substrate preparation chamber linked by a UHV transfer chamber . This unique combination of chambers and their capabilities enables researchers to create/prepare/modify surfaces prior deposition. Insitu ellipsometry and REED enable characterization and control of surfaces as well as interfaces.

Materials Deposited

  • Hafnium Oxide (HfO2)
  • Aluminum Oxide (Al2O3)
  • Titanium Oxide (TiO2)
  • Inquire for additional approved materials on this system

RIMS Name:

ALD Cluster Tool

Training:

Visit the Equipment Training Information Page to get details on how to get trained on this equipment