Chemical Vapor Deposition


Applied Materials P-5000 PECVD Cluster Tool

The Applied Materials P-5000 is a four Chamber cluster tool capable of handling small pieces through 200mm (8 inch) wafers. Three of the four chambers are dedicated to Plasma Enhanced Chemical Vapor Deposition (PECVD).

The fourth chamber on the cluster tool is a Magnetically Enhanced Reactive Ion Etch (MERIE) used for etching silicon oxide, silicon nitride and some polymers.


All CVD Chambers

  • Deposition temperature 100°C to 450°C
  • Samples moved from chamber to chamber under vacuum using 10 position vacuum load lock

Materials deposited by chamber

  • Chamber A: Liquid Precursor Delivery for back-end of the line (BEOL) PECVD oxides and barrier nitrides
  • Chamber B: PECVD silicon oxide, silicon nitride and silicon oxy-nitride
  • Chamber C: not PECVD but rather a MERIE (dry etch)
  • Chamber D: PECVD p-type, n-type, and undoped amorphous silicon and germanium deposition with dual frequency RF power supplies. (350kHz and 13.65 MHz)

Additional Equipment Details

The system can be run in either manual or automatic mode depending on the number of samples being run.

 Chamber A (liquid source oxides and nitride barriers)

  • Organic based liquids via
    • vaporizing injector with helium (He) carrier
    • vapor drawl
    • bubbler

Chamber B (silane based oxides and nitrides)

  • Silane (SiH4)
  • Ammonia (NH3)
  • Nitrous Oxide (N2O)
  • Argon (Ar)
  • Hydrogen (H2)
  • Nitrogen (N2)
  • Hexafluoroethane (C2F6) 1150 sccm

Chamber D (amorphous silicon and germanium)

  • Silane (SiH4)
  • Nitrogen (N2)
  • Argone (Ar)
  • Hydrogen (H2)
  • Helium (He)
  • Phosphine (PH3)
  • Diborane (B2H6)
  • Trimethylborane (B(CH3)3)
  • Germane (GeH4)



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