The ULVAC NE-550 ICP System has allowed us to process a wider range of materials (i.e. InP based III-V materials) due to its wider operating temperature ranges (-15°C to 180°C). The system also offers our users the flexibility of processing either 4" or 6" wafer sizes.

FEATURES

  • Low pressure, High density plasma, Good uniformity - ISM (Inductively Super Magnetron) Plasma Source* ULVAC Patent
  • Good repeatability and stability - STAR Electrode* ULVAC Patent
  • Precise wafer temperature control - Mechanical wafer clamp with He cooling
  • Easy maintenance - Simple maintenance mechanism

FILMS

  • Electronic Devices (HEMT, HBT, MMIC, etc.)
  • III-V materials: Selective etching - GaAs, AlGaAs, InGaAs, InGaP, InP
  • Insulating Layers: High speed or damage-free etching - SiO2, SiN, Low-K materials, GaAs VIA, InP VIA, SiC VIA
  • Organics: Polyimide, BCB
  • Metals and Ceramics: W, WSi, TiW, Mo, PZT, STO, BST, SBT, Ir, IrO2, Au, Pt, Ti, TiN, Ta Optical Devices (Laser Diodes, LED, etc.)
  • Non-selective etching - GaAs, AlGaAs, AlGaInP, InAlAs, InP, GaN, AlGaN, InGaN, AlN
  • ITO, Sapphire Other Devices (MEMS, Stamper for DVD, etc.)
  • Si, SiC, Glass, Quartz, Sapphire, C, Diamond-like Carbon, Al, Cr, Mo

MATERIALS PROCESSED

  • Electronic Devices (HEMT, HBT, MMIC, etc.)
  • Optical Devices (Laser Diodes, LED, etc.)