System Information

  • High Vacuum Load Locked System
  • Processing of small samples up to 200mm wafers
  • Wafer Stage rotation, high speed tilt, and temperature control
  • Ion Source
  • RF ICP 3 Grid Ion Optics
  • Dual PBN
  • Auxiliary Electrode
  • Redeposition Breaker
  • Hiden Analytical SIMS Endpoint Control

Performance and Characteristics

  • Low Damage Etching
  • Control of Ion Flux in the range of 0.1 to 1 mA/cm2
  • Ion energies from 75 to 900eV
  • Narrow energy distribution
  • Low operation pressures (<2X10-4 Torr)
  • Precise Incident Angle Control
  • Increased Profile Control
  • Enhanced Surface Smoothing
  • Better redeposition control

Applications

  • MRAM
  • SAW, BAW, and FBAR filters
  • Optical Gratings
  • Failure Analysis
  • Piezoelectric MEMS
  • Micro Structuring