Wafer scalable single-layer amorphous molybdenum trioxide
Project Summary: Molybdenum trioxide (a-MoO3) is a wide bandgap 2D layered oxide (Eg~3 eV) that is of interest for resistive switching-based nonvolatile memory devices. It is difficult to produce large-area monolayer MoO3 through exfoliation of bulk crystals or other techniques. This study demonstrates a facile route to obtain wafer-scale monolayer amorphous MoO3 using monolayer 2D MoS2 grown by metalorganic chemical vapor deposition (MOCVD) as a starting material, following by UV-ozone oxidate at substrate temperatures as low as 120oC.
