Unveiling The Wafer Scale Perfection Of 2D Materials Using Azimuthal Reflection High-Energy Electron Diffraction Map
What Has Been Achieved:
We have demonstrated an efficient method to determine the symmetry and lattice constants as well as the long-range perfection of 2D materials using glancing incident electron diffraction.
Importance of the Achievement:
This ARHEED methodology can be applied to other epitaxial 2D materials and to examine the wafer scale structure and perfection.
Unique Feature(s) of the MIP that Enabled this Achievement: