Equipment & Training Schedule

Equipment List

Technical Contacts

Lavallee, Guy

Etch Technical Lead

gpl107@psu.edu
814-865-9339

N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
gpl107

Miller, Shane

Process Engineer

spm145@psu.edu
814-865-3300

N154 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
spm145

Fitzgerald, Andrew

Engeering Support Specialist

amf24
814-867-2657

N153 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
amf24

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Etching

Etching

Details of Materials Processed

Chalcogenide Glass

This family of glasses which include SbGeSe, SbGeTe, and GeSe2 is etched in the Tegal 6540.

Silicon Carbide (SiC)

This material is readily etched in both the Ulvac and the Plasma-Therm Versalock.

III-V Compound Semiconductors

The compound semiconductors are etched in the Ulvac, Plasma-Therm Versalock ICP and Plasma-Therm 720, but not all materials can be etched in the Plasma-Therm 720.

By Material

The following have been etched:

  • Aluminum Antimony (AlSb)
  • Aluminum Gallium Arsenide (AlGaAs)
  • Gallium Arsenide (GaAs)
  • Gallium Nitride (GaN)
  • Indium Arsenide (InAs)
  • Indium Gallium Arsenide (InGaAs)
  • Indium Phosphide (InP)

By Equipment

  • The Plasma-Therm Versalock can etch all of the compound semiconductors listed above.
  • The Tegal 6540 can etch all the above except Indium Gallium Arsenide (InGaAs)
  • The Plasma-Therm 720 can etch a smaller subset: Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs), and Indium Phosphide. Gallium Nitride (GaN) can be etched slowly.

Polymer Etching

By Material

  • BARLi anti-reflective coating (resist) (BARLi)
  • Benzocyclobutene polymers/resist (BCB)
  • KMPR descum
  • Parylene / poly(p-xylylene) polymer
  • PMMA, ZEP, and other low melting point polymers
  • poly(dioctyl-bithiophene) (PDOT)
  • Polyimide (Kapton)
  • Polydimethylsiloxane (PDMS)
  • SU-8 resist (SU-8)

By equipment

The AMAT MERIE delivers high quality nearly vertical polymer etching because it is able to maintain a low substrate temperature and control very low flows of the etch gas oxygen. It can etch:

  • BARLi anti-reflective coating (resist) (BARLi)
  • PMMA, ZEP, and other low melting point polymers
  • poly(dioctyl-bithiophene) (PDOT)

The M4L is a great, fast way of removing resist "scum" and other thin organics for moderate sized (on the order of a micron or large) lithographic features. It has been used to etch:

  • BARLi anti-reflective coating (resist) (BARLi)
  • KMPR descum

The Plasma-Therm 720 can etch many polymers and is a good tool for etching resist scum from smaller nano-scale lithographic features and it can etch a few polymers that the other etch tools cannot:

  • BARLi anti-reflective coating (resist) (BARLi)
  • KMPR descum
  • Benzocyclobutene polymers/resist (BCB)
  • Parylene / poly(p-xylylene) polymer
  • PMMA, ZEP, and other low melting point polymers
  • Polydimethylsiloxane (PDMS)
  • Polydimethylsiloxane (PDMS)

Plasma-Therm Versalock

  • BARLi anti-reflective coating (resist) (BARLi)
  • poly(dioctyl-bithiophene) (PDOT)
  • SU-8 resist (SU-8)

Tegal 6540

  • BARLi anti-reflective coating (resist) (BARLi)

Platinum (Pt) and Titanium (Ti) etching

The high density plasma etch tools, the Tegal 6540 and the Plasma-Therm Versalock, can etch Ti & Pt with ease.

Silicon (Si) Etching

  • Deep Reactive Ion Etching (DRIE) of silicon (many to hundreds of microns) can be accomplished on the Alcatel Speeder 100 Si DRIE using the Bosch process. This system handles small parts through 100mm (4 inch) wafers.
  • Shallow etching of silicon can be accomplished on the Plasma-Therm 720, Plasma-Therm Versalock, and the Tegal 6540
  • Isotropic and MEMS release etching of silicon is accomplished on the Xactix XeF2 vapor etch.

Aluminum (Al)

  • Can be etched in the Plasma-Therm 720
  • Readily etched the in the Plasma-Therm Versalock and Tegal 6540.

List of Materials Processed

There are a large number of additional etches being performed by users on materials such as:

  • Alumina (Al2O3 / AlOx)
  • Aluminum (Al)
  • Antimony (Sb)
  • Bismuth Selenite (BiSe)
  • Carbon Nanotubes (CNT)
  • Chromium (Cr)
  • Gadolinium (Gd)
  • Gadolinium Nitride (GdN)
  • Germanium (Ge)
  • Germanium Antimony (GeSb)
  • Gold (Au)
  • Gorilla Glass
  • Graphene fluorination
  • Graphene
  • Hafnium Oxide (HfO2)
  • Iridium Oxide (IrO2)
  • Lanthanum Calcium Manganese Oxide (LCMO)
  • Lanthanum Oxide (La2O3)
  • Lanthanum Strontium Manganese Oxide (LSMO)
  • Lead Lanthanum Zirconate Titanate (PLZT)
  • Lead Magnesium Niobate-Lead Titanate (PMN-PT)
  • Lead Titanate (PbTiO3)
  • Lithium Niobate (LiNbO3)
  • Magnesium oxide (MgO), Manganese Arsenide (MgAs))
  • Molybdenum (Mo)
  • Parylene / poly(p-xylylene) polymer ()
  • Platinum (Pt)
  • Sapphire
  • Silicon Germanium (SiGe)
  • Silmat
  • Silspin
  • Tantalum (Ta)
  • Tantalum Oxide (Ta2O5)
  • Titanium (Ti)
  • Titanium Aluminum (TiAl)
  • Titanium Dioxide (TiO2 / TiOx)
  • Titanium Nitride (TiN)
  • Titanium/Tungsten (TiW)
  • Tungsten (W)
  • Zinc Oxide (ZnO)
  • Zinc Selenite (ZnSe)
  • Zinc Tin Oxide (ZTO)

Etches being developed

The Nanofab users working closely with the staff are developing new etches all the time. The following are some of the etches under development:

  • Iron (Fe)
  • Palladium (Pd)
  • Yttrium-Oxide (YO)
  • Aluminum/Titanium (AlTi)

Other etchable materials

There are plenty of other materials the Nanofab should be able to etch with the equipment and etch gases already available. To learn more, please contact the Nanofab at nanofab@psu.edu. The following are just some of the materials that should be etchable.

  • Niobium (Nb)
  • Silver (Ag)
  • Tantalum Carbide (Ta2C / TaC)
  • Tantalum Nitride (TaN)

Milling of any material

The custom Varian Ion Mill can remove any material, but is typically reserved for materials that cannot be otherwise dry etched such as copper and nickel. Very small features can be defined in materials. Since the removal is by sputtering, some of the milled material ends up being redeposited on the sample which means it is not as clean as a reactive ion etch or vapor etch.