Two-dimensional oxides open door for high-speed electronics

Student works on 2D material in lab

By Matthew Carroll

UNIVERSITY PARK, Pa. – Advances in computing power over the decades have come thanks in part to our ability to make smaller and smaller transistors, a building block of electronic devices, but we are nearing the limit of the silicon materials typically used. A new technique for creating 2D oxide materials may pave the way for future high-speed electronics, according to an international team of scientists.

Penn State leads semiconductor packaging, heterogeneous integration center (JUMP 2.0)

Image of a semiconductor chip in a motherboard

By Ashley WennersHerron

UNIVERSITY PARK, Pa. — The Semiconductor Research Corporation (SRC)’s Joint University Microelectronics Program 2.0 (JUMP 2.0), a consortium of industrial partners in cooperation with the Defense Advanced Research Projects Agency (DARPA), has announced the creation of a $32.7 million, Penn State-led Center for Heterogeneous Integration of Micro Electronic Systems (CHIMES).

New method can scale, simplify manufacture of stretchy semiconductors

Image of a stretchy transistor illuminated from above

By Mariah R. Lucas

UNIVERSITY PARK, Pa. — Soft, elastic semiconductors and circuits could advance wearable medical devices and other emerging technologies, but the high-performance electronics are difficult and expensive to manufacture. A Penn State-led research team plans to make the process easier and cheaper with a new manufacturing method.

They published their approach Nov. 28 in Nature Electronics.

Suzanne Mohney

Suzanne Mohney

Professor of Materials Science and Engineering, and Electrical Engineering

(e), (e)
(o) 814-863-0744
N-209 Millennium Science Complex

Jon-Paul Maria

Jon-Paul Maria

Professor of Materials Science and Engineering

(o) 814-863-3391
207 Steidle Building
Rongming Chu

Rongming Chu

Professor of Electrical Engineering

(o) 814-863-3136
N-237 Millennium Science Complex
Sukwon Choi

Sukwon Choi

Assistant Professor of Mechanical and Nuclear Engineering

(o) 814-863-4355
306 Reber Building