Defects Key To Growth Of 2D Materials
Researchers at Penn State have discovered a method for improving the quality of one class of 2D materials with potential to achieve wafer-scale growth in the future.
Researchers at Penn State have discovered a method for improving the quality of one class of 2D materials with potential to achieve wafer-scale growth in the future.
A technique to substitute carbon-hydrogen species into a single atomic layer of the semiconducting material tungsten disulfide, a transition metal dichalcogenide (TMD), dramatically changes the electronic properties of the material.
Proof that a new ability to grow thin films of an important class of materials called complex oxides will, for the first time, make these materials commercially feasible, according to Penn State materials scientists.
In 2017, MRI and Penn State began piloting a new program aimed to support the further development of strategic collaboration with industry.