Kurt J Lesker Equipment

KJL SputterThe CMS-18 is an extremely flexible three target reactive sputtering system with a load lock capable of small parts through 6" wafers.  It has 2 RF sources and one DC source with pulse functions. The system is capable of depositing multilayer film stacks, alloys, and reactively sputtered oxides and nitrides. The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning.

Configuration Deposited Films  
  • Computer controlled & recipe driven
  • Small parts through 6 inch substrates
  • Three cathode (target) system
    • 2 RF
    • 1 DC (pulsed capable 20 khz)
  • Substrate bias 100 Watts RF for pre-cleaning and ionization of reactive gases oxygen & nitrogen.
  • Substrate heating to 750C
  • Source gases
    • Argon (Ar)
    • Oxygen (O2)
    • Dilute oxygen in argon
    • Nitrogen (N2)
  • Aluminum (Al)
  • Alumina (AlxOy)
  • Barium Titanate (BaTiO3)
  • Bismuth (Bi)
  • Chromium (Cr)
  • Copper (Cu)
  • Gadolinium (Gd)
  • Gadolinium Nitride (GdN)
  • Germanium (Ge)
  • Germanium Oxide (GeO2)
  • Gold (Au)
  • Indium (In)
  • Indium tin oxide (ITO)
  • Iridium (Ir)
  • Iron/Manganese (Fe/Mn)
  • Lithium Cobalt Oxide (LCO)
  • Magnesium (Mg)
  • Magnesium oxide (MgO)
  • Molybdenum (Mo)
  • Nickel (Ni)
  • Nickel Iron (NiFe)
  • Nickel/Chromium (NiCr, Nichrome)
  • Nickel Oxide (NiO2)
  • Niobium (Nb)
  • Niobium/Iron (Nb/Fe)
  • Platinum (Pt)
  • Silicon (Si)
  • Silicon Dioxide (SiO2)
  • Silicon Nitride (SixNy)
  • Silver (Ag)
  • Tantalum (Ta)
  • Tantalum (TaN)
  • Titanium Dioxide (TiO2)
  • Titanium Nitride (TiN)
  • Tantalum Carbide (TaC)
  • Tin (Sn)
  • Titanium (Ti)
  • Titanium-Diboride (TiB2)
  • Titanium/Tungsten (Ti/W)
  • Tungsten (W)
  • Vanadium (V)
  • Vanadium-Oxide (VOx)
  • Yttrium-Oxide (Y2O3)
  • Zinc (Zn)
  • Zinc-Oxide/Aluminum Oxide (ZnO/Al2O3)
  • Zirconium (Zr)

The CMS-18 is an extremely flexible two target reactive sputtering system with a load lock capable of small parts through 6" wafers. The system is capable of depositing multilayer film stacks as well as alloys. The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning. 

Configuration Films Deposited
  • Computer controlled & recipe driven
  • Small parts through 6 inch substrates
  • Two cathode (target) system
    • 2 DC
  • Substrate bias 100 Watts RF for pre-cleaning and ionization of reactive gases oxygen & nitrogen.
  • Substrate heating to 750C
  • Source gases
    • Argon (Ar)
    • Oxygen (O2)
    • Dilute oxygen in argon
    • Nitrogen (N2)
  • Titanium
  • Platinum
  • Iridium
  • Gold
  • Chrome

The CMS-18 is an extremely flexible four target reactive sputtering system with a load lock capable of small parts through 6" wafers. The system is capable of depositing multi-layer film stacks, alloys, and complex oxides such as PZT (lead zirconate titanate). The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning.

Configuration Films Deposited 
  • Computer controlled & recipe driven
  • Small parts through 6 inch substrates
  • Four cathode (target) system
    • 2 RF
    • 2 DC
  • Substrate bias 100 Watts RF for pre-cleaning and ionization of reactive gases oxygen & nitrogen.
  • Substrate heating to 750C
  • Source gases
    • Argon (Ar)
    • Oxygen (O2)
    • Dilute oxygen in argon
    • Nitrogen (N2)
  • Lanthanum Nickelate (LNO)
  • Lead Zirconate Titanate (PZT)
  • Lead Lanthanum Zirconate Titanate (PLZT)
  • Lead Magnesium Niobate - Lead Titanate (PMN-PT)
  • Manganese (Mn) doped PZT
  • Niobium (Nb) doped PZT
  • Platinum