Piezoelectronic FETS

Electron mobility in SiO2 and PZT-gated few layer graphene and single layer graphene field effect transistors (FETs). (Photo Credit: Xia Hong and Jun Zhu, Penn State).

Other Research: High mobility graphene FETs with Ferroelectric Gate Oxide

Graphene flakes deposited on a SiO2 substrate have electron mobility of field effect transistors (FETs) limited by extrinsic scattering sources related to the SiO2 substrate.

  • Fabricated few-layer graphene (FLG) FETs on epitaxial ferroelectric oxide, Pb(Zr,Ti)O3 (PZT or lead zirconate titanate).
  • Devices show a 10-fold increase in mobility compared to SiO2-gated graphene FETs, approaching the intrinsic limit set by longitudinal acoustic (LA) phonon scattering at room temperature.
  • Results open up a new route for realizing high performance carbon based electronic devices.

Primary Investigator: Jun Zhu, Penn State Physics Department
Reference: X. Hong et al., Phys. Rev. Lett. 102, 136808 (2009).