Atomic Layer Deposition

Deposition & Growth

Cambridge Savannah 200 Atomic Layer Deposition

Description

The Cambridge Savannah 200 Atomic Layer Deposition (ALD) deposits films one atomic layer at a time on small parts through 200mm (8 inches).

Capabilities

The following materials can be deposited:

  • Alumina (Al2O3)
  • Hafnium Oxide (HfO2)
  • Tantalum Pentoxide or Tantalum(V) Oxide (Ta2O5)
  • Titanium Dioxide (TiO2)
  • Zinc Oxide
  • Substrate sizes up to 8" diameter

Material Processed

  • Zirconium Oxide (ZrO2)
  • Oxide (NiO)
  • Tin Oxide (SnO2)
  • Lanthanum
  • Additional materials will be considered on a case by case basis

Additional Equipment Details

  • Configured to handle up to 6 heated precursor lines (5 in use)
  • Temperature control ±0.2 ºC
  • High speed ALD valves (15 msec, 200 ºC)
  • Ultra high aspect ratio deposition (>1:1000)
  • Substrate temperature ranges from room temperature to 450 ºC
  • Deposition uniformity < ±1%
  • Inert carrier gas operation with MFC
  • Fully Labview™-USB-PC controlled

RIMS Name

ALD System

Training

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Kurt J. Lesker ALD150LX

  • Remote plasma source for surface pretreatment and/or as a reactive component to the respective precursor
  • Gases available: N₂, H₂, O₂, H₂/Ar
  • Load locked system substrate heating to 450°
  • Currently evaluating surface modifiation capabilities

Materials Deposited

  • Hafnium Oxide (HfO2)
  • Aluminum Oxide (Al2O3)
  • Aluminum Nitride (AlN)
  • Zirconium Oxide (ZrO2)
  • Titanium Nitride
  • Ruthenium

6" substrate sizes

RIMS Name

ALD System 150LX

Training

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Kurt J. Lesker ALD150LE

  • Perpendicular flow
  • Design flexible solid, liquid, and gas phase precursor deliver system
  • Independent substrate heating as well as heating of all input, chamber, and foreline components
  • Substrate heating to 500°C
  • Input, chamber, and foreline heating to 200°C

Materials Deposited

  • Hafnium Oxide HfO2)
  • Aluminum Oxide Al2O3)
  • Titanium Oxide TiO2)
  • 6" substrate sizes

RIMS Name

ALD System 150LE

Training

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Kurt J. Lesker ALD150LX Cluster Tool

The ALD150LX Cluster Tool is an integrated system that incorporates a plasma ALD system with a substrate preparation chamber linked by a UHV transfer chamber . This unique combination of chambers and their capabilities enables researchers to create/prepare/modify surfaces prior deposition. Insitu ellipsometry and REED enable characterization and control of surfaces as well as interfaces.

RIMS Name

ALD Cluster Tool

Training

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