Technical Contacts

Drawl, William

Research and Development Engineer

wrd1@psu.edu
814-863-8558

N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
wrd1

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Sputtering

Deposition & Growth

Four Wave Reactive Physical Vapor Deposition - Sputter

The 4-Wave ion beam deposition system employs a low energy ion source to generate Ar ions. By applying a bias to the target or targets, the ions are accelerated to initiate the sputtering process. The flux of ions generated by the source aids in directing the sputtered material. The sputtered material is subsequently deposited down stream from the ion source.

Capabilities

  • Can run three sources simultaneously or pulsed in a sequence
  • Excellent control of reactive sputtering processes are achievable with the RGA of partial pressures of reactant gases
  • Substrate is grounded
  • Pressure range is in the mid 10-4Torr
  • Well designed for the deposition of magnetic materials
  • Target utilization is very good
  • 4" substrates and smaller may be processed

RIMS Name

Sputter: 4Wave Ion Beam Deposition System

Training

Please contact William Drawl for training.  For other training: Visit the Equipment & Training Information


Kurt J Lesker CMS-18 sputter #1 (reactive) - Sputter

The CMS-18 is an extremely flexible three target reactive sputtering system with a load lock capable of small parts through 6" wafers. The system is capable of depositing multilayer film stacks, alloys, and reactively sputtered oxides and nitrides. The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning.

Capabilities

Configuration
  • Computer controlled & recipe driven
  • Small parts through 6 inch substrates
  • Three cathode (target) system
    • 2 RF
    • 1 DC (pulsed capable 20 khz)
  • Substrate bias 100 Watts RF for pre-cleaning and ionization of reactive gases oxygen & nitrogen.
  • Substrate heating to 750C
  • Source gases
    • Argon (Ar)
    • Oxygen (O2)
    • Dilute oxygen in argon
    • Nitrogen (N2)
Deposited Films
  • Aluminum (Al)
  • Aluminum/Titanium (Al/Ti)
  • Barium Titanate (BaTiO3)
  • Bismuth (Bi)
  • Chromium (Cr)
  • Copper (Cu)
  • Gadolinium (Gd)
  • Germanium (Ge)
  • Gold (Au)
  • Indium (In)
  • Indium tin oxide (ITO)
  • Iridium (Ir)
  • Iron/Manganese (Fe/Mn)
  • Lithium Cobalt Oxide (LCO)
  • Magnesium (Mg)
  • Magnesium oxide (MgO)
  • Molybdenum (Mo)
  • Nickel (Ni)
  • Nickel Iron (NiFe)
  • Nickel/Chromium (NiCr, Nichrome)
  • Niobium (Nb)
  • Niobium/Iron (Nb/Fe)
  • Platinum (Pt)
  • Silicon (Si)
  • Silver (Ag)
  • Tantalum (Ta)
  • Tantalum Carbide (TaC)
  • Tin (Sn)
  • Titanium (Ti)
  • Titanium-Diboride (TiB2)
  • Titanium/Tungsten (Ti/W)
  • Tungsten (W)
  • Vanadium (V)
  • Vanadium-Oxide (VOx)
  • Yttrium-Oxide (Y2O3)
  • Zinc (Zn)
  • Zinc-Oxide/Aluminum Oxide (ZnO/Al2O3)
  • Zirconium (Zr)

Processes

There exists at least one process for each of the films above plus there are reactive sputtering process for:

  • Alumina (AlxOy)
  • Gadolinium Nitride (GdN)
  • Silicon Dioxide (SiO2)
  • Silicon Nitride (SixNy)
  • Tantalum (TaN)
  • Titanium Dioxide (TiO2)
  • Titanium Nitride (TiN)
  • Vanadium Oxide (VOx)

RIMS Name

Sputter: Kurt Lesker CMS-18 #1

Training

Visit the Equipment & Training Information


Kurt J Lesker CMS-18 sputter #2 (nobel metal) - Sputter

Description

The CMS-18 is an extremely flexible four target reactive sputtering system with a load lock capable of small parts through 6" wafers. The system is capable of depositing multilayer film stacks, alloys, and complex oxides such as PZT (lead zirconate titanate). The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning.

Capabilities

Configuration
  • Computer controlled & recipe driven
  • Dual position load lock
  • Small parts through 6 inch substrates
  • Four cathode (target) system
    • 2 DC
  • Substrate bias 100 Watts RF for pre-cleaning and ionization of reactive gases oxygen & nitrogen.
  • Substrate heating to 750C
  • Source gases
    • Argon (Ar)
    • Oxygen (O2)
    • Dilute oxygen in argon
    • Nitrogen (N2)
Films Deposited
  • Titanium
  • Platinum
  • Iridium
  • Gold
  • Chrome

RIMS Name

Sputter: Kurt Lesker CMS-18 #3

Training

Visit the Equipment & Training Information


Kurt J Lesker CMS-18 sputter #3 (Complex oxides) - Sputter

Description

The CMS-18 is an extremely flexible four target reactive sputtering system with a load lock capable of small parts through 6" wafers. The system is capable of depositing multilayer film stacks, alloys, and complex oxides such as PZT (lead zirconate titanate). The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning.

Capabilities

Configuration
  • Computer controlled & recipe driven
  • Dual position load lock
  • Small parts through 6 inch substrates
  • Four cathode (target) system
    • 2 RF
    • 2 DC
  • Substrate bias 100 Watts RF for pre-cleaning and ionization of reactive gases oxygen & nitrogen.
  • Substrate heating to 750C
  • Source gases
    • Argon (Ar)
    • Oxygen (O2)
    • Dilute oxygen in argon
    • Nitrogen (N2)
Films Deposited
  • Lead Zirconate Titanate (PZT)
  • Lead Lanthanum Zirconate Titanate (PLZT)
  • Lead Magnesium Niobate - Lead Titanate (PMN-PT)
  • Manganese (Mn) doped PZT
  • Niobium (Nb) doped PZT
  • Platinum

RIMS Name

Sputter: Kurt Lesker CMS-18 #3

Training

Visit the Equipment & Training Information


Kurt J Lesker CMS-18 sputter #4 (Reactive/Metals) - Sputter

Description

The CMS-18 is a flexible two target sputtering system with a load lock capable of small parts through 6” wafers. The system is capable of depositing multilayer film stacks and alloys. The system is also setup for substrate heating as well as RF biasing and sample pre-cleaning.

Capabilities

Configuration
  • Computer controlled & recipe driven
  • Small parts through 6 inch substrates
  • Two cathode (target) system
    • 2 RF
    • 1 DC
  • Substrate bias 100 Watts RF for pre-cleaning.
  • Substrate heating to 750C
  • Source gas: Argon (Ar)
Films Deposited
  • Aluminum (Al)
  • Aluminum/Titanium (Al/Ti)
  • Chromium (Cr)
  • Copper (Cu)
  • Germanium (Ge)
  • Gold (Au)
  • Iridium (Ir)
  • Iron/Manganese (Fe/Mn)
  • Magnesium (Mg)
  • Molybdenum (Mo)
  • Nickel (Ni)
  • Nickel Iron (NiFe)
  • Nickel/Chromium (NiCr, Nichrome)
  • Niobium (Nb)
  • Niobium/Iron (Nb/Fe)
  • Platinum (Pt)
  • Silicon (Si)
  • Silver (Ag)
  • Tantalum (Ta)
  • Tantalum Carbide (TaC)
  • Titanium (Ti)
  • Titanium-Diboride (TiB2)
  • Titanium/Tungsten (Ti/W)
  • Tungsten (W)
  • Vanadium (V)
  • Zirconium (Zr)

Processes

There exists at least one process for each of the films above.

RIMS Name

Sputter: Kurt Lesker CMS-18 #4

Training

Visit the Equipment & Training Information