Technical Contacts

Gehoski, Kathleen

Research and Development Engineer

Technical Lead

kag31@psu.edu
814-865-7443

N106 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
kag31

Eichfeld, Chad

Research and Development Engineer

cme133@psu.edu
814-865-8976

N-153 Millennium Science Complex
University Park, PA 16801

PSU UserID: 
cme133

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Electron Beam

Lithography

Proximity error correction (PEC) - No PEC

Vistec EBPG5200 - Electron Beam Lithography

The Vistec EBPG5200 system is used to directly write fine nanometer features in resist. Features as small as 14nm have been achieved. The system has a custom stage with 10mm of Z-height travel for writing curved surfaces as well as parts with extreme topography. The system can handle small parts through 100mm (4 inch) wafers and 5" x 5" mask plates.

The Vistec has been paired with the data (pattern) preparation software Layout Beamer which is easy to use as well as having advanced features such as proximity effect correction.

Capabilities

System
  • 50 & 100kV beam energy
  • Thermal field emission source for a stable high current beam
  • 2nm Gaussian beam size
  • 1mm deflection field size
  • Proximity correction
  • 0.125nm main field resolution
  • 25MhZ beam stepping frequency
  • Stage has 210mm X-Y travel and 10mm Z travel
  • 6Å accuracy on stage location
  • Flexible 2D marker recognition for multi-layer direct write
  • External alignment microscope with height meter
Substrates
  • Small parts
  • 3" wafers (on small parts holder)
  • 100mm (4 inch) wafers
  • 5" x 5" mask plates
Resists
  • 950k M.W. PMMA - positive
  • ZEP520 - positive
  • XR1541 (HSQ) - negative

Results

Processes

Liff-off
  • Single layer liftoff with PMMA
  • Single layer liftoff with ZEP520
  • Bi-Layer liftoff with PMMA & P(MMA/MAA) (co-polymer)
  • Bi-Layer liftoff with XR1541 (HSQ) & PMMA
Pattern for etch
  • ZEP520
  • NEB31
  • HSQ

Additional Equipment Details

Resolution
  • 8nm line width @100kV
  • 10nm lines within a 100mm field size ±3nm @100kV
  • 15nm lines within a 250mm field size ±3nm @100kV
  • 20nm lines within a 500mm field size ±3nm @100kV
Stitching accuracy
  • ±15 nm for 100µm main field @100kV
  • ±20 nm for 250µm main field @100kV
  • ±25 nm for 500µm main field @100kV
  • ±25 nm for 500µm main field @50kV
Overlay accuracy
  • ±15 nm for 100µm main field @100kV
  • ±20 nm for 250µm main field @100kV
  • ±30 nm for 500µm main field @100kV
  • ±25 nm for 500µm main field @50kV
Direct Write accuracy
  • ±15 nm for 100µm main field @100kV
  • ±20 nm for 250µm main field @100kV
  • ±25 nm for 500µm main field @100kV
  • ±25 nm for 500µm main field @50kV

RIMS Name

Litho: EBPG 5200 Vistec e-beam (MSC)

Training

Visit the Equipment & Training Information