Equipment & Training Schedule

Equipment List

Technical Contacts

Lavallee, Guy

Etch Technical Lead

gpl107@psu.edu
814-865-9339

N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
gpl107

Miller, Shane

Process Engineer

spm145@psu.edu
814-865-3300

N154 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
spm145

Fitzgerald, Andrew

Engeering Support Specialist

amf24
814-867-2657

N153 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
amf24

Subscribe

Free subscriptions to newsletters, print publications, and more

Etching

Etching

Dry Etching

Dry etching is a technique of transferring a pattern into a material using reactive gases. Typically this process involves generating a plasma in a process reactor using RF energy to ionize the reactive gases. Plasmas are very complex and have numerous different reactions happening in the plasma simultaneously. These reactions form ions, neutrals, and radicals in the plasma that are then accelerated to the surface of the material by an electric field. The electric field is formed between the plasma and the material to be etched. Dry etching is a more complex technique that may or may not have good selectivity between different materials which can be a drawback. However, the major advantage is that dry etching is typically very anisotropic in nature which allows for very reproducible etch characteristics.

The nanofab has a many dry etching systems available for use.  Together, the systems make it possible to etch a wide variety of materials with the desired features sizes, aspect ratio and depths required.  Contact our staff for assistance in determining what tools would be best for your process.

Equipment/Systems

  • Alcatel Speeder 100Si
  • Alcatel Speeder 100SiO2
  • Plasma-Therm 720
  • Plasma-Therm Versalock
  • SPTS Omega LPX DSi-v
  • Ulvac NE-550

Alcatel Speeder 100 Si

The Alcatel "Speeder 100" is an ICP Etching system which is configured for etch silicon using either the patented BOSCH Deep Silicon Etch Process or a Cryogenic etch process that are typically used in MEMS (Micro-ElectroMechanical Systems), microfluidics, and silicon masters for soft lithography stamps. The system is setup to process 4" wafers and uses etch masks of either photo resist or thermal oxide. The system also has both the LF and HF options for controlling the footing at the bottom of etched features.

FEATURES

  • The Alcatel Speeder 100 Si is a BOSCH etch system for deep Si etching
  • Mechanical clamp with He backside cooling for precise temperature control
    • System can handle 4” wafers
  • Chuck Temperature is controlled using Liquid Nitrogen (LN2)
  • Excellent repeatability and stability
  • Fully Automated System

GASES

  • C4F8 (Octafluorocyclobutane)
  • SF6 (Sulfur hexafluoride)
  • O2 (Oxygen)

PROCESSES

  • The Bosch high frequency (HF) is the standard process for fast etching
  • The Bosch low frequency (LF) process is primarily used to etch silicon down to a buried oxide on a SOI wafer
  • Cryogenic etch results in smoother sidewalls than the Bosch processes

RIMS Name:

Etch: Alcatel Silicon DRIE

Training:

Visit the Equipment & Training Information


Alcatel Speeder 100 SiO2

The Alcatel "Speeder 100SiO2" is an ICP Etching system which is configured for etch silicon using either the patented BOSCH Deep Silicon Etch Process or a Cryogenic etch process that are typically used in MEMS (Micro-ElectroMechanical Systems), microfluidics, and silicon masters for soft lithography stamps. The system is setup to process 4" wafers and uses etch masks of either photo resist or thermal oxide. The system also has both the LF and HF options for controlling the footing at the bottom of etched features.

FEATURES

  • The Alcatel Speeder 100 SiO2
  • Mechanical clamp with He backside cooling for precise temperature control
    • System can handle 4” wafers
  • Chuck Temperature is controlled using Liquid Nitrogen (LN2)
  • Excellent repeatability and stability
  • Fully Automated System

GASES

  • C4F8 (Octafluorocyclobutane)
  • SF6 (Sulfur hexafluoride)
  • O2 (Oxygen)

PROCESSES

  • The Bosch high frequency (HF) is the standard process for fast etching
  • The Bosch low frequency (LF) process is primarily used to etch silicon down to a buried oxide on a SOI wafer
  • Cryogenic etch results in smoother sidewalls than the Bosch processes

RIMS Name:

Etch: Alcatel Silicon DRIE

Training:

Visit the Equipment & Training Information


Plasma-Therm 720

The Plasma-Therm 720 is a workhorse parallel plate reactive ion etch system for etching dielectrics, some metals, semi-metals and polymers using chlorine and fluorine based chemistries. It can etch small parts through 200mm (8 inch) wafers and masks up to 5" x 5". It is a recipe driven systems that includes special recipes to clean the systems to assure process reproducibility when switching chemistries.

CAPABILITIES

This is a partial list of materials etched. If you do not see your material listed here please ask the staff, Guy Lavallee or Shane Miller for guidance.

Dielectrics

  • Thermal Oxide - Wet (SiO2)
  • Thermal Oxide - Dry (SiO2)
  • LPCVD Oxide (SiO2)
  • LPCVD Nitride (Si3N4)
  • PECVD Oxide (SiO2)
  • PECVD Nitride (SiNx)
  • PECVD OxyNitride
  • PECVD Si (a-Si)

Metals

  • Gold (Au)
  • Chromium (Cr)
  • Titanium (Ti)
  • Aluminum (Al)
  • Silicon (Si)

III-V Semiconductors

  • Gallium Arsenide (GaAs)
  • Indium Phosphide (InP)
  • Indium Gallium Arsenide (InGaAs)
  • Aluminum Gallium Arsenide (AlGaAs)
  • Gallium Manganese Arsenide (GaMnAs)
  • Silicon (poly and a-Si)

Polymers

  • BCB (Benzocyclobutene polymers/resist)
  • LOR (Lift-off Resist)
  • Photoresist
  • Parylene
  • PDMS (Polydimethylsiloxane)
  • Polyimide
  • SU-8 (epoxy photoresist)

PROCESSES

Typical etch recipes

NOTE: Since the system is used to etch a variety of different materials, a strict cleaning procedure (recipe) has been implemented to ensure process repeatability.

RIMS Name:

Etch: PT720

Training:

Visit the Equipment & Training Information


Plasma-Therm Versalock

The Plasma-Therm Versalock 700 is a dual chamber high-density inductively coupled plasma (ICP) etcher. The system has chlorine and fluorine chemistries plumbed to both chambers, but processes are segregated with one chlorine-based chamber and the other fluorine-based. This is a fully computer controlled system that can handle small parts through 150mm (6 inch) wafers.

CAPABILITIES

This is a partial list of materials etched. If you do not see your material listed here please ask the staff, Guy Lavallee or Shane Miller for guidance.

Ceramics

  • Lanthanum Calcium Manganese Oxide - LCMO
  • Lanthanum Strontium Manganite - LSM or Lanthanum Strontium Manganese Oxide - LSMO
  • Lithium Niobate (LiNbO3)

Dielectrics

  • Alumina (Al2O3)
  • Hafnium Oxide (HfO2)
  • Gorilla Glass
  • Iridium Oxide (IrO2)
  • Lanthanum Oixde (La2O3)
  • Quartz
  • Sapphire
  • Silicon Dioxide (SiO2)
  • Silicon Nitride (Si3N4)
  • Tantalum Oxide (Ta2O5)
  • Titanium Dioxide (TiO2)

Ferromagnetic

  • Gadolinium Nitride (GdN)
Metals
  • Aluminum (Al)
  • Antimony (Sb)
  • Chromium (Cr)
  • Gadolinium
  • Gold (Au)
  • Iron (Fe)
  • Molybdenum (Mo)
  • Palladium (Pd) (under development)
  • Platinum (Pt)
  • Tantalum (Ta)
  • Titanium (Ti)
  • Titanium Aluminum (TiAl)
  • Titanium Nitride (TiN)
  • Titanium Tungsten (TiW)
  • Tungsten (W)

Semiconductors

  • Aluminum Antimonide (AlSb)
  • Aluminum Gallium Arsenide (AlGaAs)
  • Aluminum Indium Arsenide (AlInAs)
  • Gallium Arsenide (GaAs)
  • Gallium Nitride (GaN)
  • Germanium (Ge)
  • Indium Arsenide (InAs)
  • Indium Gallium Arsenide (InGaAs)
  • Indium Phosphide (InP)
  • Silicon (Si)
  • Silicon Carbide (SiC)
  • Silicon Germanium (SiGe)

Polymers

  • BARLi anti-reflective coating (resist)
  • Carbon Nanotubes
  • poly(dioctyl-bithiophene) - PDOT

Others

  • Graphene
  • Graphene fluorination
  • Magnesium Arsenide (Mg3As2)

Transparent Conductive Oxides

  • Indium Tin Oxide - ITO (under development)
  • Zinc Tin Oxide -- ZTO

PROCESSES

There exists at least one process for each of the materials listed above.

NOTE: Since the system is used to etch a variety of different materials, a strict cleaning procedure (recipe) has been implemented to ensure process repeatability.

RIMS Name:

Etch: PT720

Training:

Visit the Equipment & Training Information


SPTS Omega LPX DSi-v

Coming soon....April 2018

The SPTS Omega LPX DSi-v etcher is a 4" and 6" capable deep reactive ion etch (DRIE) tool for etching deep etching of silicon.  The tool utilized the patanted Bosch process for deep etching.  High aspect ratio etching with good uniformity are possible with this tool.  


ULVAC NE-550 Etching System

The ULVAC NE-550 ICP System has allowed us to process a wider range of materials (i.e. InP based III-V materials) due to its wider operating temperature ranges (-15°C to 180°C). The system also offers our users the flexibility of processing either 4" or 6" wafer sizes.

FEATURES

  • Low pressure, High density plasma, Good uniformity - ISM (Inductively Super Magnetron) Plasma Source* ULVAC Patent
  • Good repeatability and stability - STAR Electrode* ULVAC Patent
  • Precise wafer temperature control - Mechanical wafer clamp with He cooling
  • Easy maintenance - Simple maintenance mechanism

FILMS

  • Electronic Devices (HEMT, HBT, MMIC, etc.)
  • III-V materials: Selective etching - GaAs, AlGaAs, InGaAs, InGaP, InP
  • Insulating Layers: High speed or damage-free etching - SiO2, SiN, Low-K materials, GaAs VIA, InP VIA, SiC VIA
  • Organics: Polyimide, BCB
  • Metals and Ceramics: W, WSi, TiW, Mo, PZT, STO, BST, SBT, Ir, IrO2, Au, Pt, Ti, TiN, Ta Optical Devices (Laser Diodes, LED, etc.)
  • Non-selective etching - GaAs, AlGaAs, AlGaInP, InAlAs, InP, GaN, AlGaN, InGaN, AlN
  • ITO, Sapphire Other Devices (MEMS, Stamper for DVD, etc.)
  • Si, SiC, Glass, Quartz, Sapphire, C, Diamond-like Carbon, Al, Cr, Mo

MATERIALS PROCESSED

  • Electronic Devices (HEMT, HBT, MMIC, etc.)
  • Optical Devices (Laser Diodes, LED, etc.)

RIMS Name:

Ulvac NE-550

Training:

Visit the Equipment & Training Information

Visit the Ulvac Website