Equipment & Training Schedule

Equipment List

Technical Contacts

Drawl, William

Research and Development Engineer

wrd1@psu.edu
814-863-8558

N105 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
wrd1

Jones, Beth

Research and Development Engineer

baj2@psu.edu
1-814-863-1694

N104 Millennium Science Complex University Park, PA 16802

PSU UserID: 
baj2

Liu, Bangzhi

Research Associate

bul2@psu.edu
814-863-0964

N154 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
bul2

Fitzgerald, Andrew

Engeering Support Specialist

amf24
814-867-2657

N153 MILLENNIUM SCI COMPLEX
UNIVERSITY PARK, PA 16802

PSU UserID: 
amf24

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Deposition and Growth

Deposition and Growth

Chemical Vapor Deposition (CVD)

Chemical vapor deposition is a process for reacting gas or liquid mixtures under reduced pressure to create solid reaction products at wafer or other substrate surfaces. Chemical vapor deposition can be categorized into low pressure CVD (LPCVD), atmospheric CVD (APCVD), plasma enhanced CVD (PECVD) and atomic layer deposition (ALD). LPCVD generally offers higher quality films than PECVD, but LPCVD processes are run at very high temperatures compared to PECVD. ALD delivers good quality completely conformal films at relatively low temperature, but usually has extremely slow deposition/growth rates, which restrict its practical use to very thin films. (<100nm typically).

Examples of typical films from Nanofabrication equipment in each category are found below:

  • A variety of PECVD films (below) are available from the Applied Materials (AMAT) P-5000 Tool, which is a 200mm (small parts through 8 inch wafers) cluster tool that offers:
    • PECVD of oxides and nitrides from organic liquid and vapor sources
    • PECVD of silane based silicon oxide, silicon nitride and silicon oxynitrides as well as amorphous silicon (a-Si)
    • PECVD of amorphous silicon (a-Si), germanium and silicon carbide (SiC), which can be doped with phosphorous or boron. It has a second 450kHz power supply that can be run simultaneously with the main RF supply, which gives the user additional ability to tailor the thin film stress.

CVD Equipment:

Applied Materials P-5000 PECVD Cluster Tool

The Applied Materials P-5000 is a four Chamber cluster tool capable of handling small pieces through 200mm (8 inch) wafers. Three of the four chambers are dedicated to Plasma Enhanced Chemical Vapor Deposition (PECVD).

The fourth chamber on the cluster tool is a Magnetically Enhanced Reactive Ion Etch (MERIE) used for etching silicon oxide, silicon nitride and some polymers.

Capabilities:

  • Deposition temperature 100°C to 450°C
  • Samples moved from chamber to chamber under vacuum using 10 position vacuum load lock

Materials deposited:

  • Chamber A: Liquid Precursor Delivery for back-end of the line (BEOL) PECVD oxides and barrier nitrides
  • Chamber B: PECVD silicon oxide, silicon nitride and silicon oxy-nitride
  • Chamber C: MERIE (dry etch), not PECVD
  • Chamber D: PECVD p-type, n-type, and undoped amorphous silicon and germanium deposition with dual frequency RF power supplies. (350kHz and 13.65 MHz)

Additional Equipment Details:

  • The system can be run in either manual or automatic mode depending on the number of samples being run.

Chamber A (liquid source oxides and nitride barriers)

  • Organic based liquids via
    • vaporizing injector with helium (He) carrier
    • vapor drawl
    • bubbler

Chamber B (silane based oxides and nitrides)

  • Silane (SiH4)
  • Ammonia (NH3)
  • Nitrous Oxide (N2O)
  • Argon (Ar)
  • Hydrogen (H2)
  • Nitrogen (N2)
  • Hexafluoroethane (C2F6) 1150 sccm

Chamber D (amorphous silicon and germanium)

  • Silane (SiH4)
  • Nitrogen (N2)
  • Argone (Ar)
  • Hydrogen (H2)
  • Helium (He)
  • Phosphine (PH3)
  • Diborane (B2H6)
  • Trimethylborane (B(CH3)3)
  • Germane (GeH4)

RIMS Name:

Cluster Tool: Applied Materials (PECVD)

Training:

Visit the Equipment Training Information Page to get details on how to get trained on this equipment