Atomic Layer Deposition (ALD)

Atomic layer deposition is a surface controlled self-limiting process, allowing material to grow one atomic layer at a time, a conformal process by nature. Typically, ALD is used for thin film (<100nm) deposition. But it can be used for thick film deposition upto a few micron. ​

Currently, we owned two thermal ALD systems, and one plasma ALD system. Metal oxides including Al2O3, HfO2, ZnO, TiO2, Ta2O5, etc  can be deposited on thermal ALD systems. Excellent quality nitrides (TiN and AlN) and SiO2 can be deposited  on plasma ALD system. ​

Equipment

Kurt J. Lesker ALD150LX Cluster Tool

The ALD150LX Cluster Tool is an integrated system that incorporates a plasma ALD system with a substrate preparation chamber linked by a UHV transfer chamber . This unique combination of chambers and their capabilities enables researchers to create/prepare/modify surfaces prior deposition. In situ ellipsometry and REED enable characterization and control of surfaces as well as interfaces.

Materials Deposited:

  • Titanium Nitride (TiN)* (link to Materials Day poster)
  • Aluminum Nitride (AlN)
  • Aluminum Oxinitride (AlOxN1-x)
  • Silicon Oxide (SiO2)
  • Aluminum Oxide (Al2O3)
  • Hafnium Oxide (HfO2)
  • Boron Nitride (BN)
  • Platinum (Pt)

Substrate size:

  • 6" wafer

Substrate heating:

  • Up to 500°C

Kurt J. Lesker ALD150LE Cluster Tool

KJ Lesker ALD 150LE is a perpendicular flow independent substrate heating thermal ALD system. The unique vacuum and flow dynamics design enables the growth of high quality oxides, excellent for device applications.

Materials Deposited:

  • Aluminum Oxide (Al2O3)
  • Hafnium Oxide (HfO2)
  • Titanium Oxide (TiO2)
  • Tantalum Oxide (Ta2O5)
  • Zircomium Oxide (ZrO2)

Substrate size:

  • 6" wafer

Substrate heating:

  • Up to 500°C

 


Ellipsometry mapping of 6" wafer deposited with 100 cycle Ta2O5 at 200°C.

Cambridge Savannah 200 Atomic Layer Deposition

The Veeco (Previoulsy Cambridge Nanotech) Savannah 200 is  a 200mm (8 inches) ALD system, which is reconfigured to accept large samples upto 12mm tall. The films deposited are good for general use, like capping or protection. The system is open for exotic material development.

Materials Deposited:

  • Aluminum Oxide (Al2O3)
  • Zinc Oxide (ZnO)
  • Hafnium Oxide (HfO2)

Substrate size:

  • 8" wafer
  • 0.5" tall

Substrate heating:

  • Up to 400°C

 


Ellipsometry mapping of 6" wafer deposited with 100 cycle Ta2O5 at 200°C.