Strain and Isotopic Effects in WSe2
Control over disorder arising from nonequilibrium of atomic positions and distributions of mass offers a promising route to design nanomaterial properties for integration into a wide range of existing and future applications. I will discuss our recently developed method to create highly-spatially localized and well-separated emission sites in a continuous film of nominally bilayer WSe2 using an ultra-sharp dielectric tip array where we have measured a second order photon correlation parameter to be below 0.3. I will also discuss our very recent discovery of the isotope effect in bilayer 186W80Se2, which is the first report of isotope engineering in a transition metal dichalcogenide (TMD) two-dimensional material. These discoveries have general implications to defect engineering, and hence impact varied and promising technological areas from energy conversion to quantum communication.
Dr. Michael T. Pettes, Scientist 3, Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory
Date & Time
December 11, 2018
Millennium Science Complex, N-308A-B