Intrinsic Antiferromagnetic Topological Insulator MnBi2Te4 - Towards Realization of High-Temperature Quantum Anomalous Hall Insulator
Quantum anomalous Hall (QAH) insulators hold great promise for applications in energy efficient electronics and quantum computation, since it supports spin-polarized dissipation-less chiral edge states. To date, the fully developed QAH state has only been realized in magnetically doped topological insulator (TI) [i.e. Cr/V doped (Bi,Sb)2Te3] films at a ‘critical temperature’ below ~ 1K, which severely constrains both the exploration of fundamental physics and meaningful technological applications based on this exotic phenomenon. Theory has shown that an intrinsic magnetic topological insulator MnBi2Te4 is an ideal platform to realize high-temperature QAH insulator and this prediction has attracted a great deal of interest. In this talk, I will discuss our studies on the spin scattering and non-collinear spin structure induced the intrinsic anomalous Hall effect probed in magnetotransport measurements.
Dr. Seng Huat (Sam) Lee, 2DCC-MIP Postdoctoral Scholar in Bulk Crystal Growth, Penn State University
Date & Time
February 26, 2019
Millennium Science Complex, N-201