2D Chalcogenide Epitaxy by Gas Source Chemical Vapor Deposition
Gas source CVD provides a means for obtaining large area, uniform transition metal dichalcogenide monolayer and few-layer films. In addition to choice of substrate, manipulating the growth conditions is crucial in achieving epitaxy. In this talk, I will highlight our efforts at growth of epitaxial WSe2, MoS2 and WS2 using a cold-wall gas source CVD system.
Dr. Tanushree Choudhury, 2DCC Research Associate, Thin Films
Date & Time
April 24, 2018
Millennium Science Complex, N-308A-B