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Materials Innovation Platforms (MIP)

MIPs embrace the paradigm set forth by the Materials Genome Initiative (MGI) which strives to “discover, manufacture, and deploy advanced materials in half the time and at a fraction of the cost.”  Platforms respond to the increasing complexity of conducting materials research that requires the close collaboration of multidisciplinary teams who have access to cutting edge tools.
The 2DCC-MIP is funded by NSF cooperative agreement DMR-1539916.

Current Available Samples

Material

Technique

Substrate

Thickness

Sample Size

Average domain/
grain size

Alloy Composition Range

Carrier Type

Carrier Concentration

WSe2

MOCVD

c-plane sapphire

Monolayer (incomplete coverage) to ~20 nm

5x5 mm, 1x1 cm

 

~300 nm

 

 

N/A

N/A

N/A

WS2

MOCVD

c-plane sapphire

Monolayer (incomplete coverage) to ~20nm

5x5 mm, 1x1 cm

 

~100 nm

N/A

N/A

N/A

Bi2Se3

MBE

InP (111)A

3 nm to ~100 nm

1x1 cm up to 1/6 of a 2" wafer

 

~300 nm

N/A

n-type

1-5e13 cm-2

(Bi,Sb)2Te3

MBE

InP (111)A

3 nm to ~100 nm

1x1 cm up to 1/6 of a 2" wafer

 

~300 nm

0 to 1

n or p

depends on composition

(Bi,Sb)2Te3

MBE

SrTiO3

3 nm to ~20 nm

5x5 mm, 1x1 cm

 

~100 nm

0 to 1

n or p

depends on composition

MoS2

MOCVD

c-plane sapphire or SiO2

Monolayer (incomplete coverage) to ~20 nm

5x5 mm, 1x1 cm, 1.5x1.5 cm

 

~100 nm

N/A

N/A

N/A

MoS2

Powder Vaporization

c-plane sapphire or SiO2

Monolayer (incomplete coverage) to ~3 nm

5x5 mm, 1x1 cm, 1.5x1.5 cm

 

10 – 100 microns

N/A

N/A

N/A

Epitaxial Graphene

 

Si-sublimation

SiC (0001)

1-3 layers

1x1 cm up to 3-inch wafer

 

single crystal

N/A

n or p

8e12 – 1e13 cm-2

CVD Graphene

 

CVD

copper

monolayer

1x1cm up to 2x2cm

 

10 – 100 microns

N/A

p

4e12 cm-2