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Chalcogenide MOCVD System with In situ Optical Characterization (MOCVD 2)

A second Chalcogenide Metal Organic Chemical Vapor Deposition (MOCVD 2) instrument with the capabilities for in situ optical characterization is expected to be installed during the summer of 2018. In-situ optical characterization will enable on-the-fly modifications to the growth process for the desired layer composition. It would also provide a powerful tool to probe the growth mechanism of the layered chalcogenides. The additional analysis chamber with Raman and PL aids in characterizing these sensitive materials in a controlled ambient.


  • 8 bubbler stations and 4 gas sources including H2Se and H2S
  • In situ spectroscopic ellipsometery
  • Separate analysis chamber for Raman and Photoluminescence analysis
  • Wide range of growth temperatures (200-1000°C) and reactor pressures (50-700 Torr)

Materials to be grown:

WS2, WSe2, MoS2, MoSe2, NbS2, NbSe2, including various doped, alloys and heterostructures of these compounds