What Has Been Achieved:
We have demonstrated scalable crystal growth of PtSe2 on atomically smooth Al2O3 with molecular beam epitaxy
Importance of Achievement:
A scalable growth process with ultimate thickness control for PtSe2 on ultra-smooth insulating gate oxides, a prerequisite for the realization of low-power, high-performance and ultra-thin body electronics has not been achieved up to date. We fill this gap by presenting a scalable fabrication routine based on atomically smooth Al2O3 of single crystal Pt deposition with highly precise thickness control and the subsequent conversion into PtSe2.
Unique Features of the MIP That Enabled Project:
Pt deposition within chalcogenide MBE by electron beam evaporation
Publication: Maria Hilse, Ke Wang, and Roman Engel-Herbert 2020, Growth of ultrathin Pt layers and selenization into PtSe2 by molecular beam epitaxy,
2D Mater., volume 7, issue 4, 045013. DOI: 10.1088/2053-1583/ab9f91