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Atomically thin half van der Waals materials via confinement heteroepitaxy

What Has Been Achieved:

We demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently

bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character.

Importance of Achievement:

These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties.

Unique Features of the MIP That Enabled Project:

The 2DCC provided expertise in theory to help understand the origin of the physical phenomena.

Publication: Nature Materials (2020) https://doi.org/10.1038/s41563-020-0631-x

 

 

Funding for this work was also provided by the Northrop Grumman Mission Systems’ University Research Program, Semiconductor Research Corporation Intel/Global Research Collaboration Fellowship Program, task 2741.001, National Science Foundation (NSF) CAREER Awards 1453924 and 1847811, the Chinese Scholarship Council, an Alfred P. Sloan Research Fellowship, NSF DMR-1708972 and 1808900, and the 2D Crystal Consortium NSF Materials Innovation Platform under cooperative agreement DMR-1539916. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and at the Pennsylvania State University Materials Research Institute’s Material Characterization Laboratory. This research used resources of the Advanced Light Source, which is a  DOE Office of Science User Facility under contract no. DE-AC02-05CH11231

Credits/Names: 
N. Briggs†, B. Bersch†, Y. Wang†, J. Jiang, R. J. Koch, N. Nayir, K. Wang, M. Kolmer, W. Ko, A. D. L. F. Duran, S. Subramanian, C. Dong, J. Shallenberger, M. Fu, Q. Zou, Y. Chuang, Z. Gai, A. Li, A. Bostwick, C. Jozwiak, C. Chang, E. Rotenberg, J. Zhu, A. C. T. van Duin, V. Crespi, J. A. Robinson
Year of Research Highlight: 
2020
Select a Highlight Type: 
In-House Research Highlight