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Atomically thin half van der Waals materials via confinement heteroepitaxy

What Has Been Achieved:

We demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently

bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character.

Importance of Achievement:

These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties.

Unique Features of the MIP That Enabled Project:

The 2DCC provided expertise in theory to help understand the origin of the physical phenomena.

Publication: Nature Materials (2020)



Funding for this work was also provided by the Northrop Grumman Mission Systems’ University Research Program, Semiconductor Research Corporation Intel/Global Research Collaboration Fellowship Program, task 2741.001, National Science Foundation (NSF) CAREER Awards 1453924 and 1847811, the Chinese Scholarship Council, an Alfred P. Sloan Research Fellowship, NSF DMR-1708972 and 1808900, and the 2D Crystal Consortium NSF Materials Innovation Platform under cooperative agreement DMR-1539916. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and at the Pennsylvania State University Materials Research Institute’s Material Characterization Laboratory. This research used resources of the Advanced Light Source, which is a  DOE Office of Science User Facility under contract no. DE-AC02-05CH11231

N. Briggs†, B. Bersch†, Y. Wang†, J. Jiang, R. J. Koch, N. Nayir, K. Wang, M. Kolmer, W. Ko, A. D. L. F. Duran, S. Subramanian, C. Dong, J. Shallenberger, M. Fu, Q. Zou, Y. Chuang, Z. Gai, A. Li, A. Bostwick, C. Jozwiak, C. Chang, E. Rotenberg, J. Zhu, A. C. T. van Duin, V. Crespi, J. A. Robinson
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