What Has Been Achieved:
There is significant interest in the development of single photon sources for applications in quantum technologies. Localized quantum emission from defects in 2D materials such as WSe2 is a promising approach. The objective of this study was to demonstrate the role of strain in creating localized quantum emitters using wafer-scale WSe2 films rather than exfoliated flakes as employed in previous studies. The quantum emitters were fabricated by draping WSe2 films, removed from the growth substrate, over ultra-sharp sub-10 nanometer tips, forming an array of localized quantum emitters. Detailed characterization of the strain and emission properties of the emitters was carried out.
Importance of Achievement:
Our results demonstrate formation of arrays of localized quantum emitters based on wafer-scale epitaxial WSe2 films.
Unique Features of the MIP That Enabled Project:
MOCVD growth of high quality wafer-scale WSe2 films.
Publication: W. Wu, C. K. Dass, J. R. Hendrickson, R. D. Montaño, R. E. Fischer, X. Zhang, T. H. Choudhury, J. M. Redwing, Y. Wang, and M. T. Pettes*, "Locally defined quantum emission from epitaxial few-layer tungsten diselenide," Appl. Phys. Lett. 2019, 114(21), 213102.