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Deterministic Quantum Emission in an Epitaxial Two-Dimensional Material

What Has Been Achieved:

There is significant interest in the development of single photon sources for applications in quantum technologies.  Localized quantum emission from defects in 2D materials such as WSe2 is a promising approach.  The objective of this study was to demonstrate the role of strain in creating localized quantum emitters using wafer-scale WSe2 films rather than exfoliated flakes as employed in previous studies.  The quantum emitters were fabricated by draping WSe2 films, removed from the growth substrate, over ultra-sharp sub-10 nanometer tips, forming an array of localized quantum emitters.  Detailed characterization of the strain and emission properties of the emitters was carried out.


Importance of Achievement:

Our results demonstrate formation of arrays of localized quantum emitters based on wafer-scale epitaxial WSe2 films.


Unique Features of the MIP That Enabled Project:

MOCVD growth of high quality wafer-scale WSe2 films.

Publication: W. Wu, C. K. Dass, J. R. Hendrickson, R. D. Montaño, R. E. Fischer, X. Zhang, T. H. Choudhury, J. M. Redwing, Y. Wang, and M. T. Pettes*, "Locally defined quantum emission from epitaxial few-layer tungsten diselenide," Appl. Phys. Lett. 2019, 114(21), 213102.

Michael Pettes, Los Alamos National Laboratory
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