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Orientation control of epitaxial transition metal dichalcogenides on hexagonal boron nitride via defects

What Has Been Achieved:

Identification of a new growth method assisted by substrate defects that allows achieves record orientational uniformity in 2D chalcogenides.

 

Importance of Achievement:

The consequent suppression of inversion domain boundaries allows the synthesis of near-single-crystalline domains with improved transport properties.

 

Unique Features of the MIP That Enabled Project:

The 2DCC-MIP mission advancing synthesis techniques combining state-of-the-art growth, characterization, and theory efforts.

Publications:

X. Zhang, F. Zhang, Y. Wang, D. S. Schulman, T. Zhang, A. Bansal, N. Alem, S. Das, V. H. Crespi, M. Terrones, J. M. Redwing, “Defect-controlled nucleation and orientation of WSe2 on hBN – a route to single crystal epitaxial monolayers”, ACS Nano, 2019, 13 (3), pp 3341. DOI: 10.1021/acsnano.8b09230

F. Zhang, Y. Wang, C. Erb, K. Wang, P. Moradifar, V. H. Crespi, N. Alem, “Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects”, Phys. Rev. B, 2019, 99, 155430. DOI: 10.1103/PhysRevB.99.155430

Credits/Names: 
X. Zhang, F. Zhang, Wang, Schulman, Zhang , Bansal, Erb, Wang, Moradifar, Alem, Das, Crespi, Terrones, Redwing (Penn State)
Year of Research Highlight: 
2019
Select a Highlight Type: 
In-House Research Highlight