Current Available Thin Film Samples

Material

Technique

Substrate

Thickness

Sample Size

Average domain/
grain size

Alloy Composition Range

Carrier Type

Carrier Concentration

WSe2

MOCVD

c-plane sapphire

Monolayer (incomplete coverage) to ~20 nm

5x5 mm, 1x1 cm

 

~300 nm

 

 

N/A

N/A

N/A

WS2

MOCVD

c-plane sapphire

Monolayer (incomplete coverage) to ~20nm

5x5 mm, 1x1 cm

 

~100 nm

N/A

N/A

N/A

Bi2Se3

MBE

InP (111)A

3 nm to ~100 nm

1x1 cm up to 1/6 of a 2" wafer

 

~300 nm

N/A

n-type

1-5e13 cm-2

(Bi,Sb)2Te3

MBE

InP (111)A

3 nm to ~100 nm

1x1 cm up to 1/6 of a 2" wafer

 

~300 nm

0 to 1

n or p

depends on composition

(Bi,Sb)2Te3

MBE

SrTiO3

3 nm to ~20 nm

5x5 mm, 1x1 cm

 

~100 nm

0 to 1

n or p

depends on composition

MoS2

MOCVD

c-plane sapphire or SiO2

Monolayer (incomplete coverage) to ~20 nm

5x5 mm, 1x1 cm, 1.5x1.5 cm

 

~100 nm

N/A

N/A

N/A

MoS2

Powder Vaporization

c-plane sapphire or SiO2

Monolayer (incomplete coverage) to ~3 nm

5x5 mm, 1x1 cm, 1.5x1.5 cm

 

10 – 100 microns

N/A

N/A

N/A

Epitaxial Graphene

 

Si-sublimation

SiC (0001)

1-3 layers

1x1 cm up to 3-inch wafer

 

single crystal

N/A

n or p

8e12 – 1e13 cm-2

CVD Graphene

 

CVD

copper

monolayer

1x1cm up to 2x2cm

 

10 – 100 microns

N/A

p

4e12 cm-2