Scanning Electron Microscopy (SEM)
Description
Scanning Electron Microscopy (SEM) uses a focused electron beam to scan small areas of solid samples. Secondary electrons are emitted from the sample and are collected to create an area map of the secondary emissions. Since the intensity of secondary emission is very dependent on local morphology, the area map is a magnified image of the sample. Spatial resolution is as high as 1 nanometer for some instruments, but 4 nm is typical for most. Magnification factors can exceed 500,000. Backscattered electrons (BSE) and characteristic X-rays are also generated by the scanning beam and many instruments can utilize these signals for compositional analysis of microscopically small portions of the sample.
Technique Advantages
- rapid high magnification images of any solid sample
- qualitative (quantitative with standards) elemental analysis in areas down to 1 μm3 (EDS)
- 2-dimensional elemental mapping
Typical applications
- surface topography of solids
- grain size (powders or solids)
- particle size and identification
- determination of fracture modes
- reverse engineering
- corrosion products/ pitting
Sample requirements
Any vacuum compatible solid (thin films, powders, fibers, bulk materials)
Rates
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Other information
Related PSU coursework
Materials Science 430, Materials Characterization, 3-credits (Fall only)