Focused Ion Beam (FIB)

Description

A finely focused (10 nm) Ga+ beam impinges on a sample surface with 30 kV kinetic energy. Ions in the sample are sputter removed leaving a crater. By controlling the location, beam size and current density of the ion beam, material can be selectively removed from sub-micron areas. The MCL FIB also contains in situ scanning electron microscopy (SEM) capabilities for real time imaging of the ion milling site and even 3D tomography. Options also include localized deposition of Pt° via a gas injection system (GIS), selective removal of carbon-based materials and an in situ cryogenic stage.

Rates

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Technique Advantages

site selective sample preparation
3.5 nm SE imaging resolution
fabrication of complex features via combination of site specific sputtering and Pt° deposition

Typical Applications

rapid TEM sample preparation
site specific TEM sample preparation
electron microscopy of hydrated/biological specimens without fixation
evaluation of beam-sensitive materials.
3D tomography
MEMS fabrication

Other information

MCL has two copies of Introduction to Focused Ion Beams Instrumentation, Theory, Techniques and Practice Giannuzzi, Lucille A.; Stevie, Fred A. (Eds.) 2005.

These can be signed out by contacting Trevor Clark.