TYPICAL LPCVD RECIPE

Stoichiometric nitride (typical stress level over 1 GPa)

Low stress nitride (type 1 – typical stress around 400 MPa)

Low stress nitride (type 2 – typical stress around 100 MPa)

Polysilicon deposition (deposition temperature 620 C)

Low Temperature Oxide (typical deposition temperature 420 C)