THIN FILM DEPOSITION EQUIPMENT
KURT LESKER CMS-18 / RF SPUTTERING SYSTEM
Equipment Configuration
- Computer controlled
- Recipe driven
- Load lock
- Three cathode system
- 2 RF
- 1 DC (pulsed capable 20 khz)
- Substrate bias 100 Watts RF
- Small parts through 6 inch substrates
- Substrate heating to 750C
The system is capable of depositing multilayer film stacks, Alloys, and Reactive sputtering of Oxides and Nitrides. The system is also setup for substrate biasing and sample pre-cleaning.
Available Gases
AR, O2, N2
Available Target Materials
| Silver (AG) | Indium Tin Oxide (ITO) | Titanium (Ti) |
|---|---|---|
| Aluminum (Al) | Magnesium (Mg) | Titanium/Tungstun (Alloy) (TiW) |
| Gold (Au) | Niobium (Nb) | Titanium diboride (TiB2) |
| Barium Titonate (BaTiO3) | Nickel (Ni) | Yttrium Oxide (Y2O3) |
| Bismuth (Bi) | Ni Chrome (NiCr) | Yttrium (Y) |
| Chrome (Cr) | Platinum (Pt) | Tungsten (W) |
| Copper (Cu) | Silicon (Si) | Vanadium (V) |
| Iron (Fe) | Tin (Sn) | Vanadium Oxide (V3O5) |
| Germanium (Ge) | Tantalum (Ta) | Zirconium (Zr) |
| Indium (In) | Tantalum Carbide (TaC) | Zinc (Zn) |
Upon request, materials other than those listed above may be deemed acceptable, but are subject to administrative approval, prior to use. Please contact Bill Drawl ( Validate to view address - Send Email via form ) for a determination on acceptable materials.
Training
