PLASMA ETCHING EQUIPMENT

PLASMATHERM 720 RIE

This compact, user-friendly RIE system consists of a vacuum load lock connected to a simple parallel plate process chamber for dry etching semiconductor, dielectric, and metal samples. The system can be used to etch small samples through full 6-inch wafers. It is configured with the following chemistries: SF6, C2F6, CF4, CHF3, Cl2, O2, Ar, H2. Chamber plasma cleaning procedures are implemented between each etch run to assure process reproducibility.

Equipment Configuration

Load Lock with single wafeer Transfer
Chamber Configuration
- Parallel Plate
- Turbo Pump w/Ebara A10 Dry Pump Wafer Sizes: Small Pieces through 8" wafers
- Water Cooled Electrode
  - Neslab Chiller: 0^C to 120^C
  - No He backside cooling

RF Generator:
- Frequency: 13.56 MHz
- Power: 0 - 600 W

Operating Pressures
- 1mTorr - 300mTorr

Available Gases

C₂F₆, CF₄, CHF₃, SF₆, Cl₂, O₂, AR, H₂

Materials Processed


Dielectrics	Metals	Polymers
Thermal Oxide - Wet	Gold	PDMS
Thermal Oxide - Dry	Chromium	Parylene
LPCVD Oxide	Titanium	LOR
LPCVD Nitride	Aluminum	PR
LPCVD Si (poly and a-Si)	Silicon	SU-8
PECVD Oxide		BCB
PECVD Nitride	III-V	Polyimide
PECVD OxyNitride	GaAs
PECVD Si (a-Si)	InP
	InGaAs
	AlGaAs
	GaMnAs

NOTE: Due to the fact the system is used to etch a variety of different materials a strict cleaning procedure has been implemented to ensure process repeatability.

Typical Etch Recipes

Training

Training - Every Monday 1:30 pm - 3:30 pm