PLASMA ETCHING EQUIPMENT
PLASMATHERM 720 RIE
This compact, user-friendly RIE system consists of a vacuum load lock connected to a simple parallel plate process chamber for dry etching semiconductor, dielectric, and metal samples. The system can be used to etch small samples through full 6-inch wafers. It is configured with the following chemistries: SF6, C2F6, CF4, CHF3, Cl2, O2, Ar, H2. Chamber plasma cleaning procedures are implemented between each etch run to assure process reproducibility.
Equipment Configuration
- Load Lock with single wafeer Transfer
- Chamber Configuration
- Parallel Plate
- Turbo Pump w/Ebara A10 Dry Pump Wafer Sizes: Small Pieces through 8" wafers
- Water Cooled Electrode
- Neslab Chiller: 0C to 120C
- No He backside cooling
- RF Generator:
- Frequency: 13.56 MHz
- Power: 0 - 600 W
- Operating Pressures
- 1mTorr - 300mTorr
Available Gases
C2F6, CF4, CHF3, SF6, Cl2, O2, AR, H2
Materials Processed
| Dielectrics | Metals | Polymers |
| Thermal Oxide - Wet | Gold | PDMS |
| Thermal Oxide - Dry | Chromium | Parylene |
| LPCVD Oxide | Titanium | LOR |
| LPCVD Nitride | Aluminum | PR |
| LPCVD Si (poly and a-Si) | Silicon | SU-8 |
| PECVD Oxide | BCB | |
| PECVD Nitride | III-V | Polyimide |
| PECVD OxyNitride | GaAs | |
| PECVD Si (a-Si) | InP | |
| InGaAs | ||
| AlGaAs | ||
| GaMnAs |
NOTE: Due to the fact the system is used to etch a variety of different materials a strict cleaning procedure has been implemented to ensure process repeatability.
Typical Etch Recipes
Training
Training - Every Monday 1:30 pm - 3:30 pm
