PLASMA ETCHING EQUIPMENT
PLASMATHERM VERSALOCK ICP
The Versalock 700 is a modular cluster-style plasma processing system consisting of a load module, a transport module, a remote operator station and two Inductively Coupled Plasma (ICP) etch modules. The load module houses a single cassette elevator configured for up to 150mm wafers. The transfer module is equipped with a three axis vacuum robot and a dry pump that is shared with the load module. The remote operator station consists of a mobile cart, a color monitor, a keyboard and a trackball. Each processing module is equipped with an Inductively Coupled Plasma Process Module, a 10-Inch Lower Electrode with mechanical clamping, a water cooled heat exchanger to provide wafer He backside cooling, a 1000 lps turbo pump and controller with dry backing pump, a gas enclosure including eight (8) process gas lines and an Optical Emission Spectrometry (OES) end point detection system. In addition, one of the two process modules is equipped with an additional laser CCD Camera endpoint detection system.
This system is a cassette to cassette dual chamber ICP RIE system. The system is configured with a vacuum load lock connected to two separate ICP dry etching chambers via a central transfer module with a brooks with a three axis vacuum robot. The system can be used to etch small samples through full 6-inch wafers. The chambers are configured with the following chemistries: SF6, C2F6, CF4, CHF3, Cl2, BCl3, O2, and Ar. Each chamber is configured with an Optical Emission Spectrometry (OES) end point detection system. In addition, one of the two process modules is equipped with aa additional laser CCD Camera endpoint detection system.
Equipment Configuration
- Load Lock with cassette to cassette wafer transfer
- Individual Chamber Configuration (both chambers are configured identically)
- Inductively Couple Plasma
- 1000 lps Turbo Pump w/Edwards iQDP80 Dry Pumps
- Mechanical Clamped Electrode with:
- Neslab Chiller: 0C to 90C
- He backside cooling
- Wafer Sizes: Small Pieces through 6" wafers
- ICP RF Generator:
- Frequency: 13.56 MHz
- Power: 0 - 1000 W
- Electrode RF Generator:
- Frequency: 13.56 MHz
- Power: 0 - 500 W
- Operating Pressures
- 1mTorr - 100mTorr
- Ideal pressure range for ICP is 1mTorr - 20mTorr
Available Gases
C2F6, CF4, CHF3, SF6, Cl2, BCl3, O2, AR
Materials Processed
| Dielectrics | Metals |
| Thermal Oxide - Wet | Gold |
| Thermal Oxide - Dry | Chromium |
| LPCVD Oxide | Titanium |
| LPCVD Nitride | Aluminum |
| LPCVD Si (poly and a-Si) | Silicon |
| PECVD Oxide | |
| PECVD Nitride | III-V |
| PECVD OxyNitride | GaAs |
| PECVD Si (a-Si) | InP |
| InGaAs | |
| AlGaAs | |
| GaMnAs |
NOTE: Due to the fact the system is used to etch a variety of different materials a strict cleaning procedure has been implemented to ensure process repeatability.
Typical Etch Recipes
Training
Training - Every Tuesday 2 pm - 4 pm
