PLASMA ETCHING EQUIPMENT
METROLINE M4L PLASMA ETCHER
Equipment Configuration
This compact, user-friendly Plasma system is comprised of a single low density plasma chamber. The system is primarily used for ashing, and surface modifications. The system is configured with the following chemistries: Oxygen (O2),
Helium (He), and Freon 116 (C2F6). The system can be used to etch small samples through full 8-inch wafers.
- Single process chamber system
- Chamber Configuration
- 3 Shelf configuration
- Ebara A10 Dry Pump
- Wafer Sizes: Small Pieces through 8" wafers
- Chamber Configuration
- RF Generator:
- Frequency: 13.56 MHz
- Power: 0 - 600 W
- Operating Pressures
- 300mTorr - 1.3 Torr
Available Gases
C2F6, O2, HE
Materials Processed
| Polymers | ||
| PDMS | Parylene | LOR |
| Photo Resist | E-beam Resist | SU-8 |
| BCB | Polyimide | Polypyrrole |
Descum Recipe
Gases:
- O2: 150 sccm
- He: 50 sccm
Power: 200 watts
Pressure: 680mT
Time: 1-3 minutes
Surface Modification (for Bonding)
Gases:
- O2: 150 sccm
- He: 50 sccm
Power: 100 watts
Pressure: 600mT to 1000mT
Time: 30 seconds
System is used for the cleaning of organics / resist removal from substrates and for surface modification.
Training
Training - Every Tuesday 1:30 pm - 2:30 pm
