THIN FILM DEPOSITION EQUIPMENT
FEI QUANTA 200 3D DUAL BEAM FOCUSING ION BEAM
Equipment Configuration
A finely focused (10 nm) Ga+ beam impinges on a sample surface with 30 kV kinetic energy. Ions in the sample are sputter removed leaving a crater. By controlling the location, beam size and current density of the ion beam, material can be selectively removed from sub-micron areas. The FIB also contains in situ scanning electron microscopy (SEM) capabilities for real time imaging of the ion milling site and even 3D tomography. Options also include localized deposition of Pt° via a gas injection system (GIS), selective removal of carbon-based materials and an in situ cryogenic stage.
- Platinum gas injection system (GIS)
- Selective Carbon Etch Gas injection system
- Gatan Altos cryogenic sample stage and introduction system
- OmniProbe Autoprobe in situ micromanipulator
Typical Applications
- Rapid TEM sample preparation
- Site specific TEM sample preparation
- Electron microscopy of hydrated/biological specimens without fixation
- Evaluation of beam-sensitive materials.
- 3D tomography
- MEMS fabrication
