LITHOGRAPHY EQUIPMENT
LEICA EBPG5-HR E-BEAM WRITER
Equipment Configuration
The Leica EBPG-5R is a system designed for high resolution fabrication and placement of patterns written directly on substrates. The system is also very capable of writing optical masks for contact and projection lithography.
- Extraction voltages of 20, 50, and 100 keV
- Spot sizes from 8 nm to 500 nm
- Beam currents from 50 pA to 200nA
- Substrate holders:
- 5" mask
- 4" mask
- 150 mm (6") wafer holder
- 3" wafer holder
- 4" wafer holder
- 65mm x 65mm template holder for holding Molecular Imprints master templates
- Dual small parts holder capable of up to 36 mm square samples
Details
Resists in stock:
- 950K M.W. PMMA (poly methylmethacrylate) in the "safe" solvent anisol (positive resist)
- 450K M.W. PMMA
- P(MMA-MAA) (Poly(methylmethacrylate-co-methacrylate acid)) copolymer in ethyl lactate (positive resist) for bi-layer processes
- ZEP7000 (positive resist)
- ZEP520 (positive resist)
- OHKA CAN-14 chemically amplified (negative resist)
- Precoated photomask blanks (EBR-9 & ZEP7000)
- FOx-12 Hydrogen Silsesquioxane (HSQ) negative resist
- SU-8
Resolution:
- ~35 nm using PMMA liftoff at 50 keV
- ~20 nm using PMMA liftoff at 100 keV
Stitch and Overlay:
- Max 50 nm at full scan field (35 nm is typical) better than 50 nm at reduced scan field
Programmable Scan Fields:
- Up to 1 mm at 20 keV, 800 microns at 50 keV, and 560 microns at 100 keV
- Multiple markers can be used for overlay of direct write patterns (8-12 micron squares recommended)
- Automatic laser height adjustment system (maximum of +51 micron compensation)
- Stage placement within 5 nm (x & y)
- A wide range of file formats including: AutoCAD DXF, GDS II, OASIS
- Bulk & sleeve fracturing for decreased write time and improved accuracy
- Can assign different shapes separate dose factors
Fee
Click here for information on the new improved hourly rates
Training
Click here for Fall 2009 Training information.
As needed. Please Contact NNIN at Penn State for more information.
