LITHOGRAPHY EQUIPMENT
LEICA EBPG5-HR E-BEAM WRITER
Equipment Configuration
The Leica EBPG-5R is a system designed for high resolution fabrication and placement of patterns written directly on substrates. The system is also very capable of writing optical masks for contact and projection lithography.
- Extraction voltages of 20, 50, and 100 keV
- Spot sizes from 8 nm to 500 nm
- Beam currents from 50 pA to 200nA
- Substrate holders:
- 5" mask
- 4" mask
- 150 mm (6") wafer holder
- 3" wafer holder
- 4" wafer holder
- 65mm x 65mm template holder for holding Molecular Imprints master templates
- Dual small parts holder capable of up to 36 mm square samples
Details
Resists in stock:
- 950K M.W. PMMA (poly methylmethacrylate) in the "safe" solvent anisol (positive resist)
- 450K M.W. PMMA
- P(MMA-MAA) (Poly(methylmethacrylate-co-methacrylate acid)) copolymer in ethyl lactate (positive resist) for bi-layer processes
- ZEP7000 (positive resist)
- ZEP520 (positive resist)
- OHKA CAN-14 chemically amplified (negative resist)
- Precoated photomask blanks (EBR-9 & ZEP7000)
- FOx-12 Hydrogen Silsesquioxane (HSQ) negative resist
- SU-8
Resolution:
- ~35 nm using PMMA liftoff at 50 keV
- ~20 nm using PMMA liftoff at 100 keV
Stitch and Overlay:
- Max 50 nm at full scan field (35 nm is typical) better than 50 nm at reduced scan field
Programmable Scan Fields:
- Up to 1 mm at 20 keV, 800 microns at 50 keV, and 560 microns at 100 keV
- Multiple markers can be used for overlay of direct write patterns (8-12 micron squares recommended)
- Automatic laser height adjustment system (maximum of +51 micron compensation)
- Stage placement within 5 nm (x & y)
- A wide range of file formats including: AutoCAD DXF, GDS II, OASIS
- Bulk & sleeve fracturing for decreased write time and improved accuracy
- Can assign different shapes separate dose factors
Training
As needed. Please Contact NNIN at Penn State for more information.
