CHEMICAL NANOFABRICATION & CHARACTERIZATION EQUIPMENT
PHYSICAL ELECTRONICS 670 FIELD EMISSION AUGER ELECTRON SPECTROSCOPY
Equipment Configuration
- 15 nm spatial resolution
- Duoplasmatron ion source
- Autostage, autovalving
- Sample rotation stage (for enhanced depth resolution during profiling)
- In situ fracture stage for metal fracture
- Mechanism studies
Description
Finely focused electron beam (3-20 keV) ionizes atom in the near surface by the production of a core hole. Ion loses energy by filling this core hole with an electron from a shallower level combined with ejection of an electron (termed the Auger electron after its discoverer Pierre Auger). The energy of the Auger electron is characteristic of the atom from which it was emitted and the number of electrons is proportional to the concentration of that element in the sample. The relatively low energy (typically 100-2,000 eV) makes the technique inherently surface sensitive with the majority of the Auger electrons in a given sample originating from the outer 5-10 nm. In certain elements (Al, Mg, Si, In, Cu) the energy is a function of the local environment of the atom yielding a chemical (or oxidation) state sensitive tool.
Technique Advantages
- Surface sensitive (top 1-10 nm)
- Semi-quantitative without standards
- Exceptional spatial resolution
- In-depth information available by ion beam depth profiling
Typical Applications
- Defects on semiconductors
- Grain boundary chemistry
- Failure analysis
- Interdiffusion
- Fracture mechanisms
- Surface/interface impurity determination
Sample Requirements
Any vacuum compatible conducting or semiconducting solid; thin insulators on conductors possible
