THIN FILM DEPOSITION EQUIPMENT
SAVANNAH™ 200 ATOMIC LAYER DEPOSITION TOOL
Equipment Configuration
- Can be configured to handle up to 6 heated precursor lines
- Temperature control ±0.2°C
- High speed ALD valves (15 msec, 200°C)
- Ultra high aspect ratio deposition (>1:1000)
- Substrate temperature RT-450°C
- Deposition uniformity <±1%
- Inert carrier gas operation with MFC
- Fully Labview™-USB-PC controlled
Available Gases
Tetrakis (dimethylamido) hafnium (iv) (Molecular Formula)
[(CH3)2N]4Hf
Materials Processed
Hafnium Oxide
Typical Deposition Recipe
Training
Training - Every Tuesday 1:00 pm - 2:30 pm
