Directory Record for:

Darrell G. Schlom

Title(s):

Professor of Materials Science and Engineering

Department:

Materials Science and Engineering

College/Admin. Unit:

College of Earth and Mineral Sciences

Office Address:

108 Materials Research Institute Building

University Park, PA 16802

Office Phone:

(814) 863-8579

Office Fax:

(814) 863-0618

E-Mail Address:

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Web Page(s):

http://www.ems.psu.edu/~schlom/

http://www.matse.psu.edu/fac/profiles/schlom.htm

Research Synopsis:

Research involving heteroepitaxial growth and characterization of oxide thin films, especially ferroelectrics, oxides on silicon for spintronic applications or as potential replacements for SiO2 as the gate dielectric in silicon MOSFETs, and oxide superconductors. The research facilities of my group include two oxide MBE systems, two pulsed-laser deposition systems, and a four-circle x-ray diffractometer.

Technologies Impacted by Research:

Semiconductor Industry (alternative gate dielectrics), Spintronics and Quantum Computing, Thin Film Deposition Industry (MBE and PLD)

Selected Publications:

1. D.G. Schlom and J.H. Haeni, A Thermodynamic Approach to Selecting Alternative Gate Dielectrics, MRS Bulletin 27 (March 2002) 198-204.
2. J. Lettieri, J.H. Haeni, and D.G. Schlom, Critical Issues in the Heteroepitaxial Growth of Alkaline-Earth Oxides on Silicon, Journal of Vacuum Science and Technology A 20 (2002) 1332-1340.
3. M.A. Zurbuchen, G. Asayama, D.G. Schlom, and S.K. Streiffer, Ferroelectric Domain Structure of SrBi2Nb2O9 Epitaxial Thin Films, Physical Review Letters 88 (2002) 107601.